Morphology, structure, and electronic properties of Ce@C82 films on Ag:Si(1 1 1)-(√3×3)R30°

L. Wang; K. Schulte; R. A.J. Woolley; M. Kanai; T. J.S. Dennis; J. Purton; S. Patel; S. Gorovikov; V. R. Dhanak; E. F. Smith; B. C.C. Cowie; P. Moriarty

doi:10.1016/j.susc.2004.06.189

Morphology, structure, and electronic properties of Ce@C₈₂ films on Ag:Si(1 1 1)-(√3×3)R30°

L. Wang, K. Schulte, R. A.J. Woolley, M. Kanai, T. J.S. Dennis, J. Purton, S. Patel, S. Gorovikov, V. R. Dhanak, E. F. Smith, B. C.C. Cowie, P. Moriarty^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The adsorption behaviour and electronic properties of Ce@C₈₂ molecules on the Ag:Si(1 1 1)-(√3×3)R30° surface have been studied using scanning tunnelling microscopy and photoelectron spectroscopy. Submonolayer coverages and multilayer films of Ce@C₈₂ comprise highly ordered molecular domains which have a single, well-defined orientation with respect to the underlying substrate crystallographic axes. UPS spectra reveal that the Ce@C₈₂ films are semiconducting with a band gap of at least 0.3 eV and, as for La@C₈₂, contain low binding energy peaks related to charge transfer from the encapsulated atom to the fullerene molecular orbitals. The valence state of the incarcerated Ce has been probed by Ce 3d XPS for both 'as-deposited' and air-exposed Ce@C₈₂ monolayers. There is little change in the 'close to 3+' valence state of the Ce atom - and little evidence of Ce oxidation - following exposure of a Ce@C₈₂ monolayer to atmosphere for a period of 10 months.

Original language	English
Pages (from-to)	156-164
Number of pages	9
Journal	Surface Science
Volume	564
Issue number	1-3
DOIs	https://doi.org/10.1016/j.susc.2004.06.189
Publication status	Published - 20 Aug 2004
Externally published	Yes

Keywords

Fullerenes
Photoemission (total yield)
Scanning tunneling microscopy

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10.1016/j.susc.2004.06.189

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@article{1462ea129fdf41b58de4f171b98b7590,

title = "Morphology, structure, and electronic properties of Ce@C82 films on Ag:Si(1 1 1)-(√3×3)R30°",

abstract = "The adsorption behaviour and electronic properties of Ce@C82 molecules on the Ag:Si(1 1 1)-(√3×3)R30° surface have been studied using scanning tunnelling microscopy and photoelectron spectroscopy. Submonolayer coverages and multilayer films of Ce@C82 comprise highly ordered molecular domains which have a single, well-defined orientation with respect to the underlying substrate crystallographic axes. UPS spectra reveal that the Ce@C82 films are semiconducting with a band gap of at least 0.3 eV and, as for La@C82, contain low binding energy peaks related to charge transfer from the encapsulated atom to the fullerene molecular orbitals. The valence state of the incarcerated Ce has been probed by Ce 3d XPS for both 'as-deposited' and air-exposed Ce@C82 monolayers. There is little change in the 'close to 3+' valence state of the Ce atom - and little evidence of Ce oxidation - following exposure of a Ce@C82 monolayer to atmosphere for a period of 10 months.",

keywords = "Fullerenes, Photoemission (total yield), Scanning tunneling microscopy",

author = "L. Wang and K. Schulte and Woolley, {R. A.J.} and M. Kanai and Dennis, {T. J.S.} and J. Purton and S. Patel and S. Gorovikov and Dhanak, {V. R.} and Smith, {E. F.} and Cowie, {B. C.C.} and P. Moriarty",

note = "Funding Information: T.J.S.D. thanks the Royal Society for a Joint Research Project––Japan. We acknowledge funding by the UK Engineering and Physical Sciences Research Council (EPSRC) under grant GR/1880/01 and by the European Large Scale Facilities Programme for provision of funding for the experiments at MaxLAB. We also acknowledge MaxLAB for provision of synchrotron radiation on beamline I3-11, the ESRF for provision of beamtime on BL ID32, and the UK Council for the Central Laboratory of the Research Councils (CCLRC) for the provision of beamtime at Daresbury SRS. The beamtime experiments were facilitated by the expert technical assistance of George Miller, whom we sincerely thank. ",

year = "2004",

month = aug,

day = "20",

doi = "10.1016/j.susc.2004.06.189",

language = "English",

volume = "564",

pages = "156--164",

journal = "Surface Science",

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TY - JOUR

T1 - Morphology, structure, and electronic properties of Ce@C82 films on Ag:Si(1 1 1)-(√3×3)R30°

AU - Wang, L.

AU - Schulte, K.

AU - Woolley, R. A.J.

AU - Kanai, M.

AU - Dennis, T. J.S.

AU - Purton, J.

AU - Patel, S.

AU - Gorovikov, S.

AU - Dhanak, V. R.

AU - Smith, E. F.

AU - Cowie, B. C.C.

AU - Moriarty, P.

N1 - Funding Information: T.J.S.D. thanks the Royal Society for a Joint Research Project––Japan. We acknowledge funding by the UK Engineering and Physical Sciences Research Council (EPSRC) under grant GR/1880/01 and by the European Large Scale Facilities Programme for provision of funding for the experiments at MaxLAB. We also acknowledge MaxLAB for provision of synchrotron radiation on beamline I3-11, the ESRF for provision of beamtime on BL ID32, and the UK Council for the Central Laboratory of the Research Councils (CCLRC) for the provision of beamtime at Daresbury SRS. The beamtime experiments were facilitated by the expert technical assistance of George Miller, whom we sincerely thank.

PY - 2004/8/20

Y1 - 2004/8/20

N2 - The adsorption behaviour and electronic properties of Ce@C82 molecules on the Ag:Si(1 1 1)-(√3×3)R30° surface have been studied using scanning tunnelling microscopy and photoelectron spectroscopy. Submonolayer coverages and multilayer films of Ce@C82 comprise highly ordered molecular domains which have a single, well-defined orientation with respect to the underlying substrate crystallographic axes. UPS spectra reveal that the Ce@C82 films are semiconducting with a band gap of at least 0.3 eV and, as for La@C82, contain low binding energy peaks related to charge transfer from the encapsulated atom to the fullerene molecular orbitals. The valence state of the incarcerated Ce has been probed by Ce 3d XPS for both 'as-deposited' and air-exposed Ce@C82 monolayers. There is little change in the 'close to 3+' valence state of the Ce atom - and little evidence of Ce oxidation - following exposure of a Ce@C82 monolayer to atmosphere for a period of 10 months.

AB - The adsorption behaviour and electronic properties of Ce@C82 molecules on the Ag:Si(1 1 1)-(√3×3)R30° surface have been studied using scanning tunnelling microscopy and photoelectron spectroscopy. Submonolayer coverages and multilayer films of Ce@C82 comprise highly ordered molecular domains which have a single, well-defined orientation with respect to the underlying substrate crystallographic axes. UPS spectra reveal that the Ce@C82 films are semiconducting with a band gap of at least 0.3 eV and, as for La@C82, contain low binding energy peaks related to charge transfer from the encapsulated atom to the fullerene molecular orbitals. The valence state of the incarcerated Ce has been probed by Ce 3d XPS for both 'as-deposited' and air-exposed Ce@C82 monolayers. There is little change in the 'close to 3+' valence state of the Ce atom - and little evidence of Ce oxidation - following exposure of a Ce@C82 monolayer to atmosphere for a period of 10 months.

KW - Fullerenes

KW - Photoemission (total yield)

KW - Scanning tunneling microscopy

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U2 - 10.1016/j.susc.2004.06.189

DO - 10.1016/j.susc.2004.06.189

M3 - Article

AN - SCOPUS:3242875646

SN - 0039-6028

VL - 564

SP - 156

EP - 164

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Morphology, structure, and electronic properties of Ce@C₈₂ films on Ag:Si(1 1 1)-(√3×3)R30°

Abstract

Keywords

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