@inproceedings{8d0adcd48e924c8c92855d5f131d16ec,
title = "Monolithically Integrated Power Converter Based on Etching-Free p-GaN HEMTs by Hydrogen Plasma Treatment Technology",
abstract = "This paper introduces a GaN power IC platform based on the novel hydrogen (H) plasma treatment technique to eliminate the p-GaN gate etch and improve device performance. A device advanced SPICE model (ASM) high-electron-mobility transistor (HEMT) is made and validated from experimental results. A monolithically integrated GaN power stage with gate driver is demonstrated for DC-DC converters, where the remaining components are discrete. The contributions of this paper may include 1) implementation of an etching-free hydrogen-treated p-GaN technology on a 4-inch wafer, enabling 10 A/800 V application; 2) design technology co-optimization (DTCO) via ASM simulation and experimental verification; 3) monolithic GaN IC with gate driver and power device used to a 48 V/1 V floating buck conversion. This work lays the foundation for the H-treated technology for smart all-GaN power systems.",
keywords = "ASM Simulation, DC-DC Converter, GaN HEMT, gate driver, Monolithic Integration, p-GaN",
author = "Ang Li and Fan Li and Weisheng Wang and Yuhao Zhu and Wen Liu and Yu, {Guo Hao} and Zhongming Zeng and Baoshun Zhang",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 ; Conference date: 02-06-2024 Through 06-06-2024",
year = "2024",
doi = "10.1109/ISPSD59661.2024.10579682",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "374--377",
booktitle = "2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings",
}