Monolithically Integrated Power Converter Based on Etching-Free p-GaN HEMTs by Hydrogen Plasma Treatment Technology

Ang Li, Fan Li, Weisheng Wang, Yuhao Zhu, Wen Liu, Guo Hao Yu, Zhongming Zeng, Baoshun Zhang

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

Abstract

This paper introduces a GaN power IC platform based on the novel hydrogen (H) plasma treatment technique to eliminate the p-GaN gate etch and improve device performance. A device advanced SPICE model (ASM) high-electron-mobility transistor (HEMT) is made and validated from experimental results. A monolithically integrated GaN power stage with gate driver is demonstrated for DC-DC converters, where the remaining components are discrete. The contributions of this paper may include 1) implementation of an etching-free hydrogen-treated p-GaN technology on a 4-inch wafer, enabling 10 A/800 V application; 2) design technology co-optimization (DTCO) via ASM simulation and experimental verification; 3) monolithic GaN IC with gate driver and power device used to a 48 V/1 V floating buck conversion. This work lays the foundation for the H-treated technology for smart all-GaN power systems.

Original languageEnglish
Title of host publication2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages374-377
Number of pages4
ISBN (Electronic)9798350394825
DOIs
Publication statusPublished - 2024
Event36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Bremen, Germany
Duration: 2 Jun 20246 Jun 2024

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024
Country/TerritoryGermany
CityBremen
Period2/06/246/06/24

Keywords

  • ASM Simulation
  • DC-DC Converter
  • GaN HEMT
  • gate driver
  • Monolithic Integration
  • p-GaN

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