Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs

This study presents the experimental validation of the integrated circuits based on DIE-mode tri-gate GaN MIS-HEMTs. The threshold voltage of the devices can be modulated from -9.1 V to +1.1 V by varying the fin width from 800 nm to 56 nm on a single chip. The E-mode device exhibits a slight threshold voltage shift (Δ Vth) of -0.11 V from room temperature up to 15 0°C. At fin width of 56 nm, an E-mode device shows a low on-resistance ( Ron) of 8.2 Ω.mm, an on/off current ratio exceeding 109, and a breakdown voltage (VBR) of 1439 V. Furthermore, the monolithically integrated inverter has stable dynamic characteristics at 1 MHz. The inverter shows a logic low noise margin ( NML) of 2.04 V at a supply voltage of 10 V and a logic high noise margin ( NMH) of 6.83 V. The threshold voltage of the inverter ( Vth,inv) exhibits a variation of 0.09 V up to 15 0°C. These results validate the viability of monolithic integration of tri-gate GaN, thereby offering a significant opportunity to develop high-frequency and compact power conversion systems.