@inproceedings{eccd8034384c4b6fa9cfcba09aefc3df,
title = "Monolithic DFF-NAND and DFF-NOR logic circuits based on GaN MIS-HEMT",
abstract = "The NAND, NOR, AND and OR logic gate circuits are fabricated by monolithic integrated E/D mode MIS-HEMTs. Then the NOR and NAND based data flip-flop (DFF) structure are realized on the same wafer. For the above logic circuits, the driver voltage is up to 9 V. The experimental results fit with the expected logical truth table, which successfully achieved the logical judgement function. It also proves the potential of MIS-HEMT in the production of large input voltage, high-frequency logic circuits.",
keywords = "AND, GaN, Logic gate circuits, MIS-HEMT, NAND, NOR, OR, flip-flop",
author = "Yuhao Zhu and Miao Cui and Ang Li and Fan Li and Huiqing Wen and Wen Liu",
note = "Funding Information: ACKNOWLEDGMENT This work was supported by the Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), the Suzhou Science and Technology program (SYG201923), the Key Program Special Fund in Xi{\textquoteright}an Jiaotong–Liverpool University (XJTLU) (KSF-A-12 and KSF-T-07), and the XJTLU Research Development Fund (PGRS1912003). Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Conference on IC Design and Technology, ICICDT 2021 ; Conference date: 15-09-2021 Through 17-09-2021",
year = "2021",
doi = "10.1109/ICICDT51558.2021.9626401",
language = "English",
series = "2021 International Conference on IC Design and Technology, ICICDT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 International Conference on IC Design and Technology, ICICDT 2021",
}