TY - GEN
T1 - Monolithic Design of 48 V GaN DC-DC Buck Converter with Pulse-Triggered Level Shifter
AU - Zhou, Shiwei
AU - Ye, Yuan Peng
AU - Wu, Guanyu
AU - Luo, Jiale
AU - Li, Xiang
AU - Yang, Yiran
AU - Wu, Ye
AU - Cui, Miao
N1 - Publisher Copyright:
©2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This paper presents the design of a fully integrated gallium nitride (GaN) half-bridge DC-DC buck converter. The circuit employs a high-frequency half-bridge driver for enhancement-mode GaN-on-Si HEMTs, featuring a stable output scheme that utilizes instant sensing and feedback in accordance with load fluctuations. A self-bootstrap gate driver is designed to enable the implementation of rail-to-rail gate drive control voltages, facilitating the design of circuits with rapid switching speeds and minimal on-resistance. A pulse-triggered level-shifting circuit is proposed to achieve sub-nanosecond propagation delays and reduce power consumption. In addition, a closed-loop pulse-width modulation (PWM) control module is successfully realized without external control. The proposed integrated GaN buck converter could achieve a stable 48 V to 24 V conversion at 1MHz, indicating a high integration level of GaN power converters.
AB - This paper presents the design of a fully integrated gallium nitride (GaN) half-bridge DC-DC buck converter. The circuit employs a high-frequency half-bridge driver for enhancement-mode GaN-on-Si HEMTs, featuring a stable output scheme that utilizes instant sensing and feedback in accordance with load fluctuations. A self-bootstrap gate driver is designed to enable the implementation of rail-to-rail gate drive control voltages, facilitating the design of circuits with rapid switching speeds and minimal on-resistance. A pulse-triggered level-shifting circuit is proposed to achieve sub-nanosecond propagation delays and reduce power consumption. In addition, a closed-loop pulse-width modulation (PWM) control module is successfully realized without external control. The proposed integrated GaN buck converter could achieve a stable 48 V to 24 V conversion at 1MHz, indicating a high integration level of GaN power converters.
UR - http://www.scopus.com/inward/record.url?scp=85217184836&partnerID=8YFLogxK
U2 - 10.1109/SSLCHINAIFWS64644.2024.10835310
DO - 10.1109/SSLCHINAIFWS64644.2024.10835310
M3 - Conference Proceeding
AN - SCOPUS:85217184836
T3 - Proceedings - 2024 21st China International Forum on Solid State Lighting and 2024 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024
SP - 339
EP - 344
BT - Proceedings - 2024 21st China International Forum on Solid State Lighting and 2024 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024
Y2 - 18 November 2024 through 21 November 2024
ER -