Monolithic Design of 48 V GaN DC-DC Buck Converter with Pulse-Triggered Level Shifter

Shiwei  Zhou; Yuanpeng Ye; Guanyu  Wu; Jiale Luo; Xiang Li Li; Yiran Yang; Ye Wu; Miao Cui

Monolithic Design of 48 V GaN DC-DC Buck Converter with Pulse-Triggered Level Shifter

Shiwei Zhou, Yuanpeng Ye, Guanyu Wu, Jiale Luo, Xiang Li Li, Yiran Yang, Ye Wu, Miao Cui^*

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Xi'an Jiaotong‐Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

This paper presents the design of a fully integrated gallium nitride (GaN) half-bridge DC-DC buck converter. The circuit employs a high frequency half-bridge driver for enhance mentmode GaN-on-Si HEMTs, featuring a stable output scheme that utilizes instant sensing and feedback in accordance with load fluctuations. A self-bootstrap gate driver is designed to enable the implementation of rail-to-rail gate drive control voltages, facilitating the design of circuits with rapid switching speeds and minimal on-resistance. A pulse-triggered level-shifting circuit is proposed to achieve sub-nanosecond propagation delays and reduce power consumption. In addition, a closed-loop pulse-width modulation (PWM) control module is successfully realized without external control. The proposed integrated GaN buck converter could achieve a stable 48 V to 24 V conversion at 1MHz, indicating a high integration level of GaN power converters.

Original language	English
Title of host publication	The 10th International Forum on Wide Bandgap Semiconductors & The 21th China International Forum on Solid State Lighting (IFWS & SSLCHINA 2024)
Publication status	Accepted/In press - Nov 2024

Cite this

@inproceedings{756493cc8b034eed9448a8d4c0cafb4f,

title = "Monolithic Design of 48 V GaN DC-DC Buck Converter with Pulse-Triggered Level Shifter",

abstract = "This paper presents the design of a fully integrated gallium nitride (GaN) half-bridge DC-DC buck converter. The circuit employs a high frequency half-bridge driver for enhance mentmode GaN-on-Si HEMTs, featuring a stable output scheme that utilizes instant sensing and feedback in accordance with load fluctuations. A self-bootstrap gate driver is designed to enable the implementation of rail-to-rail gate drive control voltages, facilitating the design of circuits with rapid switching speeds and minimal on-resistance. A pulse-triggered level-shifting circuit is proposed to achieve sub-nanosecond propagation delays and reduce power consumption. In addition, a closed-loop pulse-width modulation (PWM) control module is successfully realized without external control. The proposed integrated GaN buck converter could achieve a stable 48 V to 24 V conversion at 1MHz, indicating a high integration level of GaN power converters.",

author = "Shiwei Zhou and Yuanpeng Ye and Guanyu Wu and Jiale Luo and Li, {Xiang Li} and Yiran Yang and Ye Wu and Miao Cui",

year = "2024",

month = nov,

language = "English",

booktitle = "The 10th International Forum on Wide Bandgap Semiconductors & The 21th China International Forum on Solid State Lighting (IFWS & SSLCHINA 2024)",

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Monolithic Design of 48 V GaN DC-DC Buck Converter with Pulse-Triggered Level Shifter. / Zhou, Shiwei ; Ye, Yuanpeng; Wu, Guanyu et al.
The 10th International Forum on Wide Bandgap Semiconductors & The 21th China International Forum on Solid State Lighting (IFWS & SSLCHINA 2024). 2024.

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Monolithic Design of 48 V GaN DC-DC Buck Converter with Pulse-Triggered Level Shifter

AU - Zhou, Shiwei

AU - Ye, Yuanpeng

AU - Wu, Guanyu

AU - Luo, Jiale

AU - Li, Xiang Li

AU - Yang, Yiran

AU - Wu, Ye

AU - Cui, Miao

PY - 2024/11

Y1 - 2024/11

N2 - This paper presents the design of a fully integrated gallium nitride (GaN) half-bridge DC-DC buck converter. The circuit employs a high frequency half-bridge driver for enhance mentmode GaN-on-Si HEMTs, featuring a stable output scheme that utilizes instant sensing and feedback in accordance with load fluctuations. A self-bootstrap gate driver is designed to enable the implementation of rail-to-rail gate drive control voltages, facilitating the design of circuits with rapid switching speeds and minimal on-resistance. A pulse-triggered level-shifting circuit is proposed to achieve sub-nanosecond propagation delays and reduce power consumption. In addition, a closed-loop pulse-width modulation (PWM) control module is successfully realized without external control. The proposed integrated GaN buck converter could achieve a stable 48 V to 24 V conversion at 1MHz, indicating a high integration level of GaN power converters.

AB - This paper presents the design of a fully integrated gallium nitride (GaN) half-bridge DC-DC buck converter. The circuit employs a high frequency half-bridge driver for enhance mentmode GaN-on-Si HEMTs, featuring a stable output scheme that utilizes instant sensing and feedback in accordance with load fluctuations. A self-bootstrap gate driver is designed to enable the implementation of rail-to-rail gate drive control voltages, facilitating the design of circuits with rapid switching speeds and minimal on-resistance. A pulse-triggered level-shifting circuit is proposed to achieve sub-nanosecond propagation delays and reduce power consumption. In addition, a closed-loop pulse-width modulation (PWM) control module is successfully realized without external control. The proposed integrated GaN buck converter could achieve a stable 48 V to 24 V conversion at 1MHz, indicating a high integration level of GaN power converters.

M3 - Conference Proceeding

BT - The 10th International Forum on Wide Bandgap Semiconductors & The 21th China International Forum on Solid State Lighting (IFWS & SSLCHINA 2024)

ER -

Monolithic Design of 48 V GaN DC-DC Buck Converter with Pulse-Triggered Level Shifter

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