@article{2d12d05b2db34be4b3c3dd04a46814b6,
title = "Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs with Threshold Voltage Modulation for High-Temperature Applications",
abstract = "This article demonstrates the integrated comparators, hysteresis comparators, and sawtooth generators based on aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The integrated circuits (ICs) exhibit thermal stability from 25 °C to 250 °C in both static and transient performances. The threshold voltage ( ${V}{_{\text {th}}}$ ) in depletion (D)-mode MIS-HEMT is modulated from -8.9 to -2.4 V to optimize the performance of integrated comparator circuits. The comparator can realize a large and stable comparison range of 3-9 V and a high voltage swing of 9.1 V, while the hysteresis comparator exhibits a good noise-immunity ability and stable hysteresis output. The sawtooth generator with the hysteresis comparator features a high amplitude (6.1 V) sawtooth signal at 500 kHz to realize a compact structure applicable to the high-voltage mixed-signal circuits. These results show the feasibility of MIS-HEMT monolithic comparator circuits in conversion systems.",
keywords = "All-GaN circuit, comparator, gallium nitride (GaN), metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs), sawtooth generator, threshold voltage modulation",
author = "Ang Li and Miao Cui and Yi Shen and Ziqian Li and Wen Liu and Mitrovic, {Ivona Z.} and Huiqing Wen and Cezhou Zhao",
note = "Funding Information: Manuscript received February 3, 2021; revised April 6, 2021; accepted April 19, 2021. Date of publication May 5, 2021; date of current version May 21, 2021. This work was supported in part by the Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Laboratory for New Energy Technology under Grant RR0140; in part by the Suzhou Science and Technology program under Grant SYG201923; in part by the Key Program Special Fund in Xi{\textquoteright}an Jiaotong–Liverpool University (XJTLU) under Grant KSF-A-05, Grant KSF-A-12, and Grant KSF-T-07; and in part by the XJTLU Research Development Fund under Grant RDF-16-02-11. The review of this article was arranged by Editor S. Chowdhury. (Corresponding authors: Wen Liu; Cezhou Zhao.) Ang Li, Miao Cui, Yi Shen, Ziqian Li, Wen Liu, Huiqing Wen, and Cezhou Zhao are with the Department of Electrical and Electronic Engineering, Xi{\textquoteright}an Jiaotong-Liverpool University, Suzhou 215123, China, and also with the Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, U.K. (e-mail: wen.liu@xjtlu.edu.cn; cezhou.zhao@xjtlu.edu.cn). Funding Information: This work was supported in part by the Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Laboratory for New Energy Technology under Grant RR0140; in part by the Suzhou Science and Technology program under Grant SYG201923; in part by the Key Program Special Fund in Xi?an Jiaotong?Liverpool University (XJTLU) under Grant KSF-A-05, Grant KSF-A-12, and Grant KSF-T-07; and in part by the XJTLU Research Development Fund under Grant RDF-16-02-11. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2021",
month = jun,
doi = "10.1109/TED.2021.3075425",
language = "English",
volume = "68",
pages = "2673--2679",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "6",
}