Low temperature solution-processed IGZO thin-film transistors

Wangying Xu; Luyao Hu; Chun Zhao; Lingjiao Zhang; Deliang Zhu; Peijiang Cao; Wenjun Liu; Shun Han; Xinke Liu; Fang Jia; Yuxiang Zeng; Youming Lu

doi:10.1016/j.apsusc.2018.06.005

Low temperature solution-processed IGZO thin-film transistors

Wangying Xu, Luyao Hu, Chun Zhao, Lingjiao Zhang, Deliang Zhu^*, Peijiang Cao, Wenjun Liu, Shun Han, Xinke Liu, Fang Jia, Yuxiang Zeng, Youming Lu

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Shenzhen University

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm ² V ⁻¹ s ⁻¹ , low subthreshold swing of 0.22 V/decade, and high on/off ratio of 10 ⁶ at 300 °C processing temperature.

Original language	English
Pages (from-to)	554-560
Number of pages	7
Journal	Applied Surface Science
Volume	455
DOIs	https://doi.org/10.1016/j.apsusc.2018.06.005
Publication status	Published - 15 Oct 2018

Keywords

IGZO
Low-temperature
Solution-processed
Thin-film transistors

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10.1016/j.apsusc.2018.06.005

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title = "Low temperature solution-processed IGZO thin-film transistors",

abstract = " We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm 2 V −1 s −1 , low subthreshold swing of 0.22 V/decade, and high on/off ratio of 10 6 at 300 °C processing temperature.",

keywords = "IGZO, Low-temperature, Solution-processed, Thin-film transistors",

author = "Wangying Xu and Luyao Hu and Chun Zhao and Lingjiao Zhang and Deliang Zhu and Peijiang Cao and Wenjun Liu and Shun Han and Xinke Liu and Fang Jia and Yuxiang Zeng and Youming Lu",

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year = "2018",

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doi = "10.1016/j.apsusc.2018.06.005",

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T1 - Low temperature solution-processed IGZO thin-film transistors

AU - Xu, Wangying

AU - Hu, Luyao

AU - Zhao, Chun

AU - Zhang, Lingjiao

AU - Zhu, Deliang

AU - Cao, Peijiang

AU - Liu, Wenjun

AU - Han, Shun

AU - Liu, Xinke

AU - Jia, Fang

AU - Zeng, Yuxiang

AU - Lu, Youming

PY - 2018/10/15

Y1 - 2018/10/15

N2 - We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm 2 V −1 s −1 , low subthreshold swing of 0.22 V/decade, and high on/off ratio of 10 6 at 300 °C processing temperature.

AB - We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm 2 V −1 s −1 , low subthreshold swing of 0.22 V/decade, and high on/off ratio of 10 6 at 300 °C processing temperature.

KW - IGZO

KW - Low-temperature

KW - Solution-processed

KW - Thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=85048196077&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2018.06.005

DO - 10.1016/j.apsusc.2018.06.005

M3 - Article

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SN - 0169-4332

VL - 455

SP - 554

EP - 560

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Low temperature solution-processed IGZO thin-film transistors

Abstract

Keywords

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