TY - JOUR
T1 - Low-Resistance Ni/Ag Contacts on GaN-Based p-Channel Heterojunction Field-Effect Transistor
AU - Zhang, Yuanlei
AU - Sun, Zhiwei
AU - Wang, Weisheng
AU - Liang, Ye
AU - Cui, Miao
AU - Zhao, Yinchao
AU - Wen, Huiqing
AU - Liu, Wen
N1 - Funding Information:
This work was supported in part by the Suzhou Science and Technology Program under Grant SYG201923 and Grant SYG202131; in part by the Key Program Special Fund in Xi’an Jiaotong–Liverpool University (XJTLU) under Grant KSF-T-07; and in part by the XJTLU Research Development Fund under Grant PGRS1912003, Grant RDF-20-02-43, and Grant RDF-20-02-62
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - In this work, we have demonstrated the Ni/Ag contacts on p-channel heterostructure field-effect transistors (p-HFETs) based on the p-GaN/AlGaN/GaN/Si platform. Using an optimal contact condition, where Ni/Ag (1/120 nm) was deposited and annealed at 550 °C for 180 s in O2 ambient, a low contact resistance (27.44 Ω mm at 50 mA/mm) and a low Schottky barrier height (SBH) (0.479 eV) have been obtained. The p-HFETs with Ni/Ag contacts exhibit a very slight Schottky character, resulting in a satisfactory ON-resistance (RON) of 2.1 kΩ mm. Furthermore, the p-HFETs exhibit excellent electrical properties including a threshold voltage (Vth) of -1.91 V, an ON-state current (ION) of 2.46 mA/mm, and an ION/IOFF ratio of ∼ 106. These results present a great potential of cost-effective Ni/Ag contacts on p-HFETs.
AB - In this work, we have demonstrated the Ni/Ag contacts on p-channel heterostructure field-effect transistors (p-HFETs) based on the p-GaN/AlGaN/GaN/Si platform. Using an optimal contact condition, where Ni/Ag (1/120 nm) was deposited and annealed at 550 °C for 180 s in O2 ambient, a low contact resistance (27.44 Ω mm at 50 mA/mm) and a low Schottky barrier height (SBH) (0.479 eV) have been obtained. The p-HFETs with Ni/Ag contacts exhibit a very slight Schottky character, resulting in a satisfactory ON-resistance (RON) of 2.1 kΩ mm. Furthermore, the p-HFETs exhibit excellent electrical properties including a threshold voltage (Vth) of -1.91 V, an ON-state current (ION) of 2.46 mA/mm, and an ION/IOFF ratio of ∼ 106. These results present a great potential of cost-effective Ni/Ag contacts on p-HFETs.
KW - Ohmic contacts
KW - p-channel heterostructure field-effect transistor (p-HFET)
KW - p-gallium nitride (GaN)
KW - Schottky barrier height (SBH)
UR - http://www.scopus.com/inward/record.url?scp=85144795742&partnerID=8YFLogxK
U2 - 10.1109/TED.2022.3225367
DO - 10.1109/TED.2022.3225367
M3 - Article
AN - SCOPUS:85144795742
SN - 0018-9383
VL - 70
SP - 31
EP - 35
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
ER -