TY - GEN
T1 - Low-power MEMS-based CMOS Transceivers
AU - Tang, Kai
AU - Guo, Ting
AU - Sun, Xiaolin
AU - Zhao, Chun
AU - Gao, Hao
AU - Zheng, Yuanjin
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - An ISM 915-MHz FSK transceiver for low power internet-of-things (IoT) applications is presented in this paper. The system supports a shared antenna interface of FSK-matched filter for TRX and a matching network for the FSK RX. To consume less power, the transmitter employs an adaptive fast switching technique for FSK modulator, and uses a high-Q MEMS resonator to get frequency stability. In addition, for better interference filtering, the MEMS-based modulator is shared to provide LO in FSK RX as it owns inherent side-lobe suppression. Fabricated in 65-nm CMOS process, the TX generates FSK signals of -8.2dBm output power at ISM-915 MHz and the data rate is up to 10Mb/s. At 1 MHz offset, the measured phase noise is -139.4dBc/Hz and -138.7dBc/Hz at 911.9 MHz and 923.1 MHz, respectively. By sharing the modulator, the RX exhibits -30.7dB in-band SIR, -72dBm sensitivity at BER of 10-3. The TX and FSK RX consume 753 μW@10 Mb/s and 700.5 μW@10 Mb/s, leading to the energy efficiency of 75. 3pJ/b and 70 pJ/b, respectively.
AB - An ISM 915-MHz FSK transceiver for low power internet-of-things (IoT) applications is presented in this paper. The system supports a shared antenna interface of FSK-matched filter for TRX and a matching network for the FSK RX. To consume less power, the transmitter employs an adaptive fast switching technique for FSK modulator, and uses a high-Q MEMS resonator to get frequency stability. In addition, for better interference filtering, the MEMS-based modulator is shared to provide LO in FSK RX as it owns inherent side-lobe suppression. Fabricated in 65-nm CMOS process, the TX generates FSK signals of -8.2dBm output power at ISM-915 MHz and the data rate is up to 10Mb/s. At 1 MHz offset, the measured phase noise is -139.4dBc/Hz and -138.7dBc/Hz at 911.9 MHz and 923.1 MHz, respectively. By sharing the modulator, the RX exhibits -30.7dB in-band SIR, -72dBm sensitivity at BER of 10-3. The TX and FSK RX consume 753 μW@10 Mb/s and 700.5 μW@10 Mb/s, leading to the energy efficiency of 75. 3pJ/b and 70 pJ/b, respectively.
KW - FSK
KW - MEMS
KW - oscillator
KW - transceiver
KW - ULP
UR - http://www.scopus.com/inward/record.url?scp=85180780572&partnerID=8YFLogxK
U2 - 10.1109/ICICDT59917.2023.10332344
DO - 10.1109/ICICDT59917.2023.10332344
M3 - Conference Proceeding
AN - SCOPUS:85180780572
T3 - Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023
SP - 44
EP - 47
BT - Proceedings of the 2023 International Conference on IC Design and Technology, ICICDT 2023
A2 - Bui, Duy-Hieu
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 International Conference on IC Design and Technology, ICICDT 2023
Y2 - 25 September 2023 through 27 September 2023
ER -