Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3charge trapping layer

Jiachen Duan; Yuanlei Zhang; Ye Liang; Yutao Cai; Wen Liu

doi:10.1109/ICICDT56182.2022.9933099

Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al₂O₃/ZrO_x/Al₂O₃charge trapping layer

Jiachen Duan, Yuanlei Zhang, Ye Liang, Yutao Cai, Wen Liu

Xi'an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

In this paper, normally-OFF AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with partially recessed gate and Al2O3/ZrOx/Al2O3 charge trapping layer gate dielectrics (CTL) are studied. The threshold voltage (Vth) of the proposed CTL-HEMTs is 1.56 V, the sub-threshold slope (S.S) is 90 mV/dec and ION/IOFF ratio is 108. Moreover, saturation drain current (IDmax) and low on-resistance (RON) of CTL-HEMTs is 732 mA/mm and 7.9 Ω•mm (LGS = 3μm). Furthermore, the Bi-direction C-V measurement of the MIS-capacitors was measured to explore the charge trapping behavior. The experimental results prove the potential of ZrOx CTL to realize the normally-OFF operation MIS-HEMTs with desired performance.

Original language	English
Title of host publication	Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022
Editors	Xuan-Tu Tran, Duy-Hieu Bui
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	89-92
Number of pages	4
ISBN (Electronic)	9781665459013
DOIs	https://doi.org/10.1109/ICICDT56182.2022.9933099
Publication status	Published - 2022
Event	2022 IEEE International Conference on IC Design and Technology, ICICDT 2022 - Hanoi, Viet Nam Duration: 21 Sept 2022 → 23 Sept 2022

Publication series

Name	Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

Conference

Conference	2022 IEEE International Conference on IC Design and Technology, ICICDT 2022
Country/Territory	Viet Nam
City	Hanoi
Period	21/09/22 → 23/09/22

Keywords

AlO
GaN
MIS-HEMTs
normally-OFF
ZrO

Access to Document

10.1109/ICICDT56182.2022.9933099

Cite this

Duan, J., Zhang, Y., Liang, Y., Cai, Y., & Liu, W. (2022). Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al₂O₃/ZrO_x/Al₂O₃charge trapping layer. In X.-T. Tran, & D.-H. Bui (Eds.), Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022 (pp. 89-92). (Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT56182.2022.9933099

Duan, Jiachen ; Zhang, Yuanlei ; Liang, Ye et al. / Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al₂O₃/ZrO_x/Al₂O₃charge trapping layer. Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022. editor / Xuan-Tu Tran ; Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 89-92 (Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022).

@inproceedings{3ed44c4d426a4531a9a8d486b4d54b22,

title = "Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3charge trapping layer",

abstract = "In this paper, normally-OFF AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with partially recessed gate and Al2O3/ZrOx/Al2O3 charge trapping layer gate dielectrics (CTL) are studied. The threshold voltage (Vth) of the proposed CTL-HEMTs is 1.56 V, the sub-threshold slope (S.S) is 90 mV/dec and ION/IOFF ratio is 108. Moreover, saturation drain current (IDmax) and low on-resistance (RON) of CTL-HEMTs is 732 mA/mm and 7.9 Ω•mm (LGS = 3μm). Furthermore, the Bi-direction C-V measurement of the MIS-capacitors was measured to explore the charge trapping behavior. The experimental results prove the potential of ZrOx CTL to realize the normally-OFF operation MIS-HEMTs with desired performance.",

keywords = "AlO, GaN, MIS-HEMTs, normally-OFF, ZrO",

author = "Jiachen Duan and Yuanlei Zhang and Ye Liang and Yutao Cai and Wen Liu",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by the Suzhou Science and Technology program (SYG201923，SYG202131), the Key Program Special Fund in Xi{\textquoteright}an Jiaotong–Liverpool University (XJTLU) ( KSF-A-12 and KSF-T-07). Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022 ; Conference date: 21-09-2022 Through 23-09-2022",

year = "2022",

doi = "10.1109/ICICDT56182.2022.9933099",

language = "English",

series = "Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "89--92",

editor = "Xuan-Tu Tran and Duy-Hieu Bui",

booktitle = "Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022",

}

Duan, J, Zhang, Y, Liang, Y, Cai, Y & Liu, W 2022, Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al₂O₃/ZrO_x/Al₂O₃charge trapping layer. in X-T Tran & D-H Bui (eds), Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022. Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022, Institute of Electrical and Electronics Engineers Inc., pp. 89-92, 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022, Hanoi, Viet Nam, 21/09/22. https://doi.org/10.1109/ICICDT56182.2022.9933099

Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al₂O₃/ZrO_x/Al₂O₃charge trapping layer. / Duan, Jiachen; Zhang, Yuanlei; Liang, Ye et al.
Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022. ed. / Xuan-Tu Tran; Duy-Hieu Bui. Institute of Electrical and Electronics Engineers Inc., 2022. p. 89-92 (Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3charge trapping layer

AU - Duan, Jiachen

AU - Zhang, Yuanlei

AU - Liang, Ye

AU - Cai, Yutao

AU - Liu, Wen

N1 - Funding Information: ACKNOWLEDGMENT This work was supported by the Suzhou Science and Technology program (SYG201923，SYG202131), the Key Program Special Fund in Xi’an Jiaotong–Liverpool University (XJTLU) ( KSF-A-12 and KSF-T-07). Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - In this paper, normally-OFF AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with partially recessed gate and Al2O3/ZrOx/Al2O3 charge trapping layer gate dielectrics (CTL) are studied. The threshold voltage (Vth) of the proposed CTL-HEMTs is 1.56 V, the sub-threshold slope (S.S) is 90 mV/dec and ION/IOFF ratio is 108. Moreover, saturation drain current (IDmax) and low on-resistance (RON) of CTL-HEMTs is 732 mA/mm and 7.9 Ω•mm (LGS = 3μm). Furthermore, the Bi-direction C-V measurement of the MIS-capacitors was measured to explore the charge trapping behavior. The experimental results prove the potential of ZrOx CTL to realize the normally-OFF operation MIS-HEMTs with desired performance.

AB - In this paper, normally-OFF AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with partially recessed gate and Al2O3/ZrOx/Al2O3 charge trapping layer gate dielectrics (CTL) are studied. The threshold voltage (Vth) of the proposed CTL-HEMTs is 1.56 V, the sub-threshold slope (S.S) is 90 mV/dec and ION/IOFF ratio is 108. Moreover, saturation drain current (IDmax) and low on-resistance (RON) of CTL-HEMTs is 732 mA/mm and 7.9 Ω•mm (LGS = 3μm). Furthermore, the Bi-direction C-V measurement of the MIS-capacitors was measured to explore the charge trapping behavior. The experimental results prove the potential of ZrOx CTL to realize the normally-OFF operation MIS-HEMTs with desired performance.

KW - AlO

KW - GaN

KW - MIS-HEMTs

KW - normally-OFF

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=85142756537&partnerID=8YFLogxK

U2 - 10.1109/ICICDT56182.2022.9933099

DO - 10.1109/ICICDT56182.2022.9933099

M3 - Conference Proceeding

AN - SCOPUS:85142756537

T3 - Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

SP - 89

EP - 92

BT - Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

A2 - Tran, Xuan-Tu

A2 - Bui, Duy-Hieu

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

Y2 - 21 September 2022 through 23 September 2022

ER -

Duan J, Zhang Y, Liang Y, Cai Y, Liu W. Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al₂O₃/ZrO_x/Al₂O₃charge trapping layer. In Tran XT, Bui DH, editors, Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 89-92. (Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022). doi: 10.1109/ICICDT56182.2022.9933099