Investigate the Nb doping position and its relationship with bulk topological superconductivity in NbxBi2Se3 by X-ray photoelectron spectra

Jingfeng Wang, Fei Jiao, Di Zhang, Meixia Chang, Lingbo Cai, Yunlong Li, Cao Wang, Shugang Tan, Qiang Jing, Bo Liu*, Dong Qian

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The relationship between the doping position of Nb in Bi2Se3 and its superconductivity is investigated by XPS, magnetic measurement and transport measurement. It is found that for NbxBi2Se3, the main impurity phase comes from BiNbSe3. Superconducting volume fraction of Nb doped Bi2Se3 increases with the ratio of Nb inserted in the van der Waals layers. The van der Waals-layer-position doped Nb may lead to superconductivity in Bi2Se3. This work may stimulate further investigation on topological superconductivity mechanism of NbxBi2Se3.
Original languageEnglish
JournalJournal of Physics and Chemistry of Solids
Volume137
DOIs
Publication statusPublished - 2020
Externally publishedYes

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