Interface-dependent spin-reorientation energy barrier in Fe/MgO(001) thin film

Heechae Choi; Eung Kwan Lee; Sung Beom Cho; Dong Su Yoo; Yong Chae Chung

doi:10.1109/LED.2011.2160148

Interface-dependent spin-reorientation energy barrier in Fe/MgO(001) thin film

Heechae Choi^*, Eung Kwan Lee, Sung Beom Cho, Dong Su Yoo, Yong Chae Chung

^*Corresponding author for this work

Hanyang University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 ×1) periodicity. The formation of the oxygen vacancies in c(2×1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.

Original language	English
Article number	5960764
Pages (from-to)	1287-1289
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	9
DOIs	https://doi.org/10.1109/LED.2011.2160148
Publication status	Published - Sept 2011
Externally published	Yes

Keywords

Density functional theory
Fe/MgO(001)
interface structure
perpendicular magnetic anisotropy

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10.1109/LED.2011.2160148

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title = "Interface-dependent spin-reorientation energy barrier in Fe/MgO(001) thin film",

abstract = "Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 ×1) periodicity. The formation of the oxygen vacancies in c(2×1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.",

keywords = "Density functional theory, Fe/MgO(001), interface structure, perpendicular magnetic anisotropy",

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note = "Funding Information: Manuscript received May 29, 2011; revised June 8, 2011; accepted June 14, 2011. Date of publication July 25, 2011; date of current version August 24, 2011. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) No. 2011-0016945. The review of this letter was arranged by Editor L. Selmi.",

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AU - Lee, Eung Kwan

AU - Cho, Sung Beom

AU - Yoo, Dong Su

AU - Chung, Yong Chae

N1 - Funding Information: Manuscript received May 29, 2011; revised June 8, 2011; accepted June 14, 2011. Date of publication July 25, 2011; date of current version August 24, 2011. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) No. 2011-0016945. The review of this letter was arranged by Editor L. Selmi.

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N2 - Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 ×1) periodicity. The formation of the oxygen vacancies in c(2×1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.

AB - Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 ×1) periodicity. The formation of the oxygen vacancies in c(2×1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.

KW - Density functional theory

KW - Fe/MgO(001)

KW - interface structure

KW - perpendicular magnetic anisotropy

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Interface-dependent spin-reorientation energy barrier in Fe/MgO(001) thin film

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Keywords

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