TY - JOUR
T1 - Intelligent Tribotronic Transistors Toward Tactile Near-Sensor Computing
AU - Lei, Hao
AU - Yin, Zi Yi
AU - Huang, Peihao
AU - Gao, Xu
AU - Zhao, Chun
AU - Wen, Zhen
AU - Sun, Xuhui
AU - Wang, Sui Dong
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024
Y1 - 2024
N2 - For the next generation of human-machine interaction (HMI) systems, the development of a tactile interaction unit with multimodal, high sensitivity, and real-time perception and recognition is the key. Herein, an artificial tactile near-sensor computing (ATNSC) unit based on a triboelectric tactile sensor and an organic synaptic transistor is reported. By introducing multi-peak microstructures, the mechanical performance of the tactile sensor is optimized, showing a high sensitivity of 0.98 V kPa−1 in the pressure range of 0–10 kPa and maintaining 0.11 V kPa−1 at high pressures up to 350 kPa. Additionally, by designing stripe-like convex structures on the top surface, the sensor is capable of bimodal perception in both pressure and sliding sensations. Furthermore, the organic synaptic transistor, which can be driven by tactile sensing stimuli in a variety of circumstances, is achieved utilizing an ion-rich gelatin dielectric covered by a hydrophobic polymer coating layer. The ATNSC unit well demonstrates the stimuli-dependent short-term memory effect, and it enables tactile near-sensor computing for feature action recognition in an HMI system, laying a solid foundation for the construction of intelligent interaction devices.
AB - For the next generation of human-machine interaction (HMI) systems, the development of a tactile interaction unit with multimodal, high sensitivity, and real-time perception and recognition is the key. Herein, an artificial tactile near-sensor computing (ATNSC) unit based on a triboelectric tactile sensor and an organic synaptic transistor is reported. By introducing multi-peak microstructures, the mechanical performance of the tactile sensor is optimized, showing a high sensitivity of 0.98 V kPa−1 in the pressure range of 0–10 kPa and maintaining 0.11 V kPa−1 at high pressures up to 350 kPa. Additionally, by designing stripe-like convex structures on the top surface, the sensor is capable of bimodal perception in both pressure and sliding sensations. Furthermore, the organic synaptic transistor, which can be driven by tactile sensing stimuli in a variety of circumstances, is achieved utilizing an ion-rich gelatin dielectric covered by a hydrophobic polymer coating layer. The ATNSC unit well demonstrates the stimuli-dependent short-term memory effect, and it enables tactile near-sensor computing for feature action recognition in an HMI system, laying a solid foundation for the construction of intelligent interaction devices.
KW - artificial synapses
KW - tactile receptors
KW - triboelectric nanogenerators
KW - tribotronic transistors
UR - http://www.scopus.com/inward/record.url?scp=85190551571&partnerID=8YFLogxK
U2 - 10.1002/adfm.202401913
DO - 10.1002/adfm.202401913
M3 - Article
AN - SCOPUS:85190551571
SN - 1616-301X
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -