TY - GEN
T1 - Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode
AU - Qi, Yanfei
AU - Fang, Yuxiao
AU - Zhao, Chun
AU - Lu, Qifeng
AU - Liu, Chenguang
AU - Yang, Li
AU - Zhao, Ce Zhou
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/5
Y1 - 2017/10/5
N2 - Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of resistance ratio (HRS/LRS) was achieved by controlling the ALD deposition cycle ratio of HfO2:Al2O3. The resistance ratio was improved by intermixing HfO2 and Al2O3 under 5mA compliance condition. This can be partially attributed to fact that intermixing HfO2 and Al2O3 stabilized the oxide matrix and suppressed crystallization.
AB - Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of resistance ratio (HRS/LRS) was achieved by controlling the ALD deposition cycle ratio of HfO2:Al2O3. The resistance ratio was improved by intermixing HfO2 and Al2O3 under 5mA compliance condition. This can be partially attributed to fact that intermixing HfO2 and Al2O3 stabilized the oxide matrix and suppressed crystallization.
UR - http://www.scopus.com/inward/record.url?scp=85045058205&partnerID=8YFLogxK
U2 - 10.1109/IPFA.2017.8060189
DO - 10.1109/IPFA.2017.8060189
M3 - Conference Proceeding
AN - SCOPUS:85045058205
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
SP - 1
EP - 3
BT - 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Y2 - 4 July 2017 through 7 July 2017
ER -