Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode

Yanfei Qi, Yuxiao Fang, Chun Zhao, Qifeng Lu, Chenguang Liu, Li Yang, Ce Zhou Zhao*

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

1 Citation (Scopus)

Abstract

Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of resistance ratio (HRS/LRS) was achieved by controlling the ALD deposition cycle ratio of HfO2:Al2O3. The resistance ratio was improved by intermixing HfO2 and Al2O3 under 5mA compliance condition. This can be partially attributed to fact that intermixing HfO2 and Al2O3 stabilized the oxide matrix and suppressed crystallization.

Original languageEnglish
Title of host publication24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781538617793
DOIs
Publication statusPublished - 5 Oct 2017
Event24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China
Duration: 4 Jul 20177 Jul 2017

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2017-July

Conference

Conference24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Country/TerritoryChina
CityChengdu
Period4/07/177/07/17

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