Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode

Yanfei Qi; Yuxiao Fang; Chun Zhao; Qifeng Lu; Chenguang Liu; Li Yang; Ce Zhou Zhao

doi:10.1109/IPFA.2017.8060189

Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode

Yanfei Qi, Yuxiao Fang, Chun Zhao, Qifeng Lu, Chenguang Liu, Li Yang, Ce Zhou Zhao^*

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

Four HfAlO based resistive random access memory (RRAM) devices with different HfO₂ percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of resistance ratio (HRS/LRS) was achieved by controlling the ALD deposition cycle ratio of HfO₂:Al₂O₃. The resistance ratio was improved by intermixing HfO₂ and Al₂O₃ under 5mA compliance condition. This can be partially attributed to fact that intermixing HfO₂ and Al₂O₃ stabilized the oxide matrix and suppressed crystallization.

Original language	English
Title of host publication	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781538617793
DOIs	https://doi.org/10.1109/IPFA.2017.8060189
Publication status	Published - 5 Oct 2017
Event	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China Duration: 4 Jul 2017 → 7 Jul 2017

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2017-July

Conference

Conference	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Country/Territory	China
City	Chengdu
Period	4/07/17 → 7/07/17

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10.1109/IPFA.2017.8060189

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Qi, Y., Fang, Y., Zhao, C., Lu, Q., Liu, C., Yang, L., & Zhao, C. Z. (2017). Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 (pp. 1-3). (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2017.8060189

Qi, Yanfei ; Fang, Yuxiao ; Zhao, Chun et al. / Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode. 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-3 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{11f6a7a901064603b7596c1aa90b64cd,

title = "Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode",

abstract = "Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of resistance ratio (HRS/LRS) was achieved by controlling the ALD deposition cycle ratio of HfO2:Al2O3. The resistance ratio was improved by intermixing HfO2 and Al2O3 under 5mA compliance condition. This can be partially attributed to fact that intermixing HfO2 and Al2O3 stabilized the oxide matrix and suppressed crystallization.",

author = "Yanfei Qi and Yuxiao Fang and Chun Zhao and Qifeng Lu and Chenguang Liu and Li Yang and Zhao, {Ce Zhou}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 ; Conference date: 04-07-2017 Through 07-07-2017",

year = "2017",

month = oct,

day = "5",

doi = "10.1109/IPFA.2017.8060189",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Qi, Y , Fang, Y , Zhao, C , Lu, Q , Liu, C , Yang, L & Zhao, CZ 2017, Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode. in 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2017-July, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017, Chengdu, China, 4/07/17. https://doi.org/10.1109/IPFA.2017.8060189

Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode. / Qi, Yanfei ; Fang, Yuxiao ; Zhao, Chun et al.
24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-3 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode

AU - Qi, Yanfei

AU - Fang, Yuxiao

AU - Zhao, Chun

AU - Lu, Qifeng

AU - Liu, Chenguang

AU - Yang, Li

AU - Zhao, Ce Zhou

PY - 2017/10/5

Y1 - 2017/10/5

N2 - Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of resistance ratio (HRS/LRS) was achieved by controlling the ALD deposition cycle ratio of HfO2:Al2O3. The resistance ratio was improved by intermixing HfO2 and Al2O3 under 5mA compliance condition. This can be partially attributed to fact that intermixing HfO2 and Al2O3 stabilized the oxide matrix and suppressed crystallization.

AB - Four HfAlO based resistive random access memory (RRAM) devices with different HfO2 percentage (0%, 10%, 90% and 100%) were fabricated using atomic layer deposition (ALD). Three types of electroforming processes were observed with 1mA current compliance (CC), including initial high resistance state (HRS), initial medium resistance state (MRS) and initial low resistance state (LRS). The modulation of resistance ratio (HRS/LRS) was achieved by controlling the ALD deposition cycle ratio of HfO2:Al2O3. The resistance ratio was improved by intermixing HfO2 and Al2O3 under 5mA compliance condition. This can be partially attributed to fact that intermixing HfO2 and Al2O3 stabilized the oxide matrix and suppressed crystallization.

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Qi Y , Fang Y , Zhao C , Lu Q , Liu C , Yang L et al. Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-3. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2017.8060189

Influence of HfAlO composition on resistance ratio of RRAM with Ti electrode

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