Influence of dopant type in single crystal Si on the electroless plated Ni-P films

Hua Li Ma; Xin Yue Zhang; Yin Xiao Du; Lei Ming Chen; Yi Ru; Rui Zhang; Fan Guang Zeng; Bo Liu; Kai Liu; Hao Liang

Influence of dopant type in single crystal Si on the electroless plated Ni-P films

Hua Li Ma^*, Xin Yue Zhang, Yin Xiao Du, Lei Ming Chen, Yi Ru, Rui Zhang, Fan Guang Zeng, Bo Liu, Kai Liu, Hao Liang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The Ni-P Films are electrolessly deposited respectively on n-Si (100) and p-Si (100). On the same preparation condition, the surface images and compositions of films on different substrate are analyzed by SEM and energy spectrometer, and flatness of films is studied by AFM. And the results show that the surface images, flatness and compositions of films are apparently dense as p-Si substrate and n-Si substrate, the quality of films on p-Si substrate is preferable.

Original language	English
Pages (from-to)	564-568
Number of pages	5
Journal	Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
Volume	17
Issue number	6
Publication status	Published - Dec 2011
Externally published	Yes

Keywords

Electroless
N-Si
Ni-P films
P-Si

Cite this

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title = "Influence of dopant type in single crystal Si on the electroless plated Ni-P films",

abstract = "The Ni-P Films are electrolessly deposited respectively on n-Si (100) and p-Si (100). On the same preparation condition, the surface images and compositions of films on different substrate are analyzed by SEM and energy spectrometer, and flatness of films is studied by AFM. And the results show that the surface images, flatness and compositions of films are apparently dense as p-Si substrate and n-Si substrate, the quality of films on p-Si substrate is preferable.",

keywords = "Electroless, N-Si, Ni-P films, P-Si",

author = "Ma, {Hua Li} and Zhang, {Xin Yue} and Du, {Yin Xiao} and Chen, {Lei Ming} and Yi Ru and Rui Zhang and Zeng, {Fan Guang} and Bo Liu and Kai Liu and Hao Liang",

year = "2011",

month = dec,

language = "English",

volume = "17",

pages = "564--568",

journal = "Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices",

issn = "1007-4252",

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TY - JOUR

T1 - Influence of dopant type in single crystal Si on the electroless plated Ni-P films

AU - Ma, Hua Li

AU - Zhang, Xin Yue

AU - Du, Yin Xiao

AU - Chen, Lei Ming

AU - Ru, Yi

AU - Zhang, Rui

AU - Zeng, Fan Guang

AU - Liu, Bo

AU - Liu, Kai

AU - Liang, Hao

PY - 2011/12

Y1 - 2011/12

N2 - The Ni-P Films are electrolessly deposited respectively on n-Si (100) and p-Si (100). On the same preparation condition, the surface images and compositions of films on different substrate are analyzed by SEM and energy spectrometer, and flatness of films is studied by AFM. And the results show that the surface images, flatness and compositions of films are apparently dense as p-Si substrate and n-Si substrate, the quality of films on p-Si substrate is preferable.

AB - The Ni-P Films are electrolessly deposited respectively on n-Si (100) and p-Si (100). On the same preparation condition, the surface images and compositions of films on different substrate are analyzed by SEM and energy spectrometer, and flatness of films is studied by AFM. And the results show that the surface images, flatness and compositions of films are apparently dense as p-Si substrate and n-Si substrate, the quality of films on p-Si substrate is preferable.

KW - Electroless

KW - N-Si

KW - Ni-P films

KW - P-Si

UR - http://www.scopus.com/inward/record.url?scp=84862110017&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84862110017

SN - 1007-4252

VL - 17

SP - 564

EP - 568

JO - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

JF - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

IS - 6

ER -

Influence of dopant type in single crystal Si on the electroless plated Ni-P films

Abstract

Keywords

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