In situ analysis of high energetic ion RBS combined with low energetic ion sputtering for thin films

Bo Liu; Lei Jiang; Zhou Zhu-Ying; Mian Hong He; Guo Qing Zhao; Xiang Fu Zong

In situ analysis of high energetic ion RBS combined with low energetic ion sputtering for thin films

Bo Liu^*, Lei Jiang, Zhou Zhu-Ying, Mian Hong He, Guo Qing Zhao, Xiang Fu Zong

^*Corresponding author for this work

Fudan University

Research output: Contribution to journal › Article › peer-review

Abstract

With an experimental system composed of an ion gun and a RBS analysis chamber, in situ analysis of low energetic ion sputtering and high energetic ion RBS for thin films is carried out. We analyze, for three kinds of samples, their compositions and deeply-buried layers. In the analysis of Au/Si sample, the sputtering rate of Au with Ar⁺ etching is discussed and in the analysis of deeply-buried layers of Si/Ge-Si/Si and WSi_{cursive Greek chi}/SiO₂/Si samples, the depth resolution is obviously improved. The advantages and disadvantages of this analytical method in thin film studies, as well as its potential applications, are discussed.

Original language	English
Pages (from-to)	168-169
Number of pages	2
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	49
Issue number	1
Publication status	Published - Jan 2000
Externally published	Yes

Cite this

@article{564c1f49af714fcb880587bb3bc8c2f2,

title = "In situ analysis of high energetic ion RBS combined with low energetic ion sputtering for thin films",

abstract = "With an experimental system composed of an ion gun and a RBS analysis chamber, in situ analysis of low energetic ion sputtering and high energetic ion RBS for thin films is carried out. We analyze, for three kinds of samples, their compositions and deeply-buried layers. In the analysis of Au/Si sample, the sputtering rate of Au with Ar+ etching is discussed and in the analysis of deeply-buried layers of Si/Ge-Si/Si and WSicursive Greek chi/SiO2/Si samples, the depth resolution is obviously improved. The advantages and disadvantages of this analytical method in thin film studies, as well as its potential applications, are discussed.",

author = "Bo Liu and Lei Jiang and Zhou Zhu-Ying and He, {Mian Hong} and Zhao, {Guo Qing} and Zong, {Xiang Fu}",

year = "2000",

month = jan,

language = "English",

volume = "49",

pages = "168--169",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

number = "1",

}

TY - JOUR

T1 - In situ analysis of high energetic ion RBS combined with low energetic ion sputtering for thin films

AU - Liu, Bo

AU - Jiang, Lei

AU - Zhu-Ying, Zhou

AU - He, Mian Hong

AU - Zhao, Guo Qing

AU - Zong, Xiang Fu

PY - 2000/1

Y1 - 2000/1

N2 - With an experimental system composed of an ion gun and a RBS analysis chamber, in situ analysis of low energetic ion sputtering and high energetic ion RBS for thin films is carried out. We analyze, for three kinds of samples, their compositions and deeply-buried layers. In the analysis of Au/Si sample, the sputtering rate of Au with Ar+ etching is discussed and in the analysis of deeply-buried layers of Si/Ge-Si/Si and WSicursive Greek chi/SiO2/Si samples, the depth resolution is obviously improved. The advantages and disadvantages of this analytical method in thin film studies, as well as its potential applications, are discussed.

AB - With an experimental system composed of an ion gun and a RBS analysis chamber, in situ analysis of low energetic ion sputtering and high energetic ion RBS for thin films is carried out. We analyze, for three kinds of samples, their compositions and deeply-buried layers. In the analysis of Au/Si sample, the sputtering rate of Au with Ar+ etching is discussed and in the analysis of deeply-buried layers of Si/Ge-Si/Si and WSicursive Greek chi/SiO2/Si samples, the depth resolution is obviously improved. The advantages and disadvantages of this analytical method in thin film studies, as well as its potential applications, are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0042724643&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0042724643

SN - 1000-3290

VL - 49

SP - 168

EP - 169

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 1

ER -

In situ analysis of high energetic ion RBS combined with low energetic ion sputtering for thin films

Abstract

Other files and links

Fingerprint

Cite this