Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM

Y. F. Qi; C. Z. Zhao; C. Zhao; I. Z. Mitrovic; W. Y. Xu; L. Yang; Z. J. Shen; J. H. He

doi:10.1109/EUROSOI-ULIS45800.2019.9041862

Improved Resistive Switching Behavior in Solution-processed AlO_x based RRAM

Y. F. Qi, C. Z. Zhao^*, C. Zhao, I. Z. Mitrovic, W. Y. Xu, L. Yang, Z. J. Shen, J. H. He

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

In this study, a comprehensive comparison in light of the switching behavior has been made to the AlO_xdielectrics in Resistive Random Access Memory (RRAM) devices, which were fabricated with solution-processed (SP) and atomic-layer-deposition (ALD) based techniques under the same temperature (250°C). The improved resistive switching properties such as smaller Vset/Vreset (1.21.8 V/-0.9-1.3 V), a narrower RHRs/RLRs distribution (280 k O/0.81 k O) and a higher resistance ratio (8230) under 5 mA compliance current (CC) have been achieved with SP method. The conduction mechanisms of the ON and OFF state for both devices are the ohmic conduction and Frenkel-Poole emission, respectively. Therefore, the solution-based fabrication method has the potential application for the flexible memory, due to the fabrication merits of the low-temperature, low cost, large area implementation and being environmental-friendly.

Original language	English
Title of host publication	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728116587
DOIs	https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041862
Publication status	Published - Apr 2019
Event	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France Duration: 1 Apr 2019 → 3 Apr 2019

Publication series

Name	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Conference

Conference	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Country/Territory	France
City	Grenoble
Period	1/04/19 → 3/04/19

Keywords

ALD
Aluminum Oxide
RRAM
Resistive Switching
Solution-processed

Access to Document

10.1109/EUROSOI-ULIS45800.2019.9041862

Cite this

Qi, Y. F., Zhao, C. Z., Zhao, C., Mitrovic, I. Z., Xu, W. Y., Yang, L., Shen, Z. J., & He, J. H. (2019). Improved Resistive Switching Behavior in Solution-processed AlO_x based RRAM. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 Article 9041862 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041862

Qi, Y. F. ; Zhao, C. Z. ; Zhao, C. et al. / Improved Resistive Switching Behavior in Solution-processed AlO_x based RRAM. 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

@inproceedings{9a50185b346543bcb06ca435e15f6557,

title = "Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM",

abstract = "In this study, a comprehensive comparison in light of the switching behavior has been made to the AlOxdielectrics in Resistive Random Access Memory (RRAM) devices, which were fabricated with solution-processed (SP) and atomic-layer-deposition (ALD) based techniques under the same temperature (250°C). The improved resistive switching properties such as smaller Vset/Vreset (1.21.8 V/-0.9-1.3 V), a narrower RHRs/RLRs distribution (280 k O/0.81 k O) and a higher resistance ratio (8230) under 5 mA compliance current (CC) have been achieved with SP method. The conduction mechanisms of the ON and OFF state for both devices are the ohmic conduction and Frenkel-Poole emission, respectively. Therefore, the solution-based fabrication method has the potential application for the flexible memory, due to the fabrication merits of the low-temperature, low cost, large area implementation and being environmental-friendly.",

keywords = "ALD, Aluminum Oxide, RRAM, Resistive Switching, Solution-processed",

author = "Qi, {Y. F.} and Zhao, {C. Z.} and C. Zhao and Mitrovic, {I. Z.} and Xu, {W. Y.} and L. Yang and Shen, {Z. J.} and He, {J. H.}",

note = "Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, and 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05 and KSF-A-07). The author IZM acknowledges UKRI GIAA award as well as British Council UKIERI project no. IND/CONT/G/17-18/18. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 ; Conference date: 01-04-2019 Through 03-04-2019",

year = "2019",

month = apr,

doi = "10.1109/EUROSOI-ULIS45800.2019.9041862",

language = "English",

series = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

}

Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ, Xu, WY, Yang, L, Shen, ZJ & He, JH 2019, Improved Resistive Switching Behavior in Solution-processed AlO_x based RRAM. in 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019., 9041862, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Grenoble, France, 1/04/19. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041862

Improved Resistive Switching Behavior in Solution-processed AlO_x based RRAM. / Qi, Y. F.; Zhao, C. Z.; Zhao, C. et al.
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9041862 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM

AU - Qi, Y. F.

AU - Zhao, C. Z.

AU - Zhao, C.

AU - Mitrovic, I. Z.

AU - Xu, W. Y.

AU - Yang, L.

AU - Shen, Z. J.

AU - He, J. H.

N1 - Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, and 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05 and KSF-A-07). The author IZM acknowledges UKRI GIAA award as well as British Council UKIERI project no. IND/CONT/G/17-18/18. Publisher Copyright: © 2019 IEEE.

PY - 2019/4

Y1 - 2019/4

N2 - In this study, a comprehensive comparison in light of the switching behavior has been made to the AlOxdielectrics in Resistive Random Access Memory (RRAM) devices, which were fabricated with solution-processed (SP) and atomic-layer-deposition (ALD) based techniques under the same temperature (250°C). The improved resistive switching properties such as smaller Vset/Vreset (1.21.8 V/-0.9-1.3 V), a narrower RHRs/RLRs distribution (280 k O/0.81 k O) and a higher resistance ratio (8230) under 5 mA compliance current (CC) have been achieved with SP method. The conduction mechanisms of the ON and OFF state for both devices are the ohmic conduction and Frenkel-Poole emission, respectively. Therefore, the solution-based fabrication method has the potential application for the flexible memory, due to the fabrication merits of the low-temperature, low cost, large area implementation and being environmental-friendly.

AB - In this study, a comprehensive comparison in light of the switching behavior has been made to the AlOxdielectrics in Resistive Random Access Memory (RRAM) devices, which were fabricated with solution-processed (SP) and atomic-layer-deposition (ALD) based techniques under the same temperature (250°C). The improved resistive switching properties such as smaller Vset/Vreset (1.21.8 V/-0.9-1.3 V), a narrower RHRs/RLRs distribution (280 k O/0.81 k O) and a higher resistance ratio (8230) under 5 mA compliance current (CC) have been achieved with SP method. The conduction mechanisms of the ON and OFF state for both devices are the ohmic conduction and Frenkel-Poole emission, respectively. Therefore, the solution-based fabrication method has the potential application for the flexible memory, due to the fabrication merits of the low-temperature, low cost, large area implementation and being environmental-friendly.

KW - ALD

KW - Aluminum Oxide

KW - RRAM

KW - Resistive Switching

KW - Solution-processed

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U2 - 10.1109/EUROSOI-ULIS45800.2019.9041862

DO - 10.1109/EUROSOI-ULIS45800.2019.9041862

M3 - Conference Proceeding

AN - SCOPUS:85083266805

T3 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

BT - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 1 April 2019 through 3 April 2019

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Qi YF, Zhao CZ, Zhao C, Mitrovic IZ, Xu WY, Yang L et al. Improved Resistive Switching Behavior in Solution-processed AlO_x based RRAM. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9041862. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). doi: 10.1109/EUROSOI-ULIS45800.2019.9041862