TY - GEN
T1 - Impact of cerium oxide's grain size for dielectric relaxation
AU - Zhao, Chun
AU - Zhao, Ce Zhou
AU - Werner, Matthew
AU - Taylor, Steve
AU - Chalker, Paul
AU - King, Peter
PY - 2013
Y1 - 2013
N2 - Cerium oxide (CeO2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150 °C, 200 °C, 250 °C, 300 °C and 350 °C, respectively. CeO2 were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X-ray diffraction patterns. Strong frequency dispersion is found in the capacitance-voltage measurement. Normalized dielectric constant is quantitatively utilized to characterize the dielectric constant variation. The relationship extracted between grain size and dielectric relaxation for CeO2 suggests that tuning properties for improved frequency dispersion can be achieved by controlling grain size, hence, the strain at the nanoscale dimensions.
AB - Cerium oxide (CeO2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150 °C, 200 °C, 250 °C, 300 °C and 350 °C, respectively. CeO2 were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X-ray diffraction patterns. Strong frequency dispersion is found in the capacitance-voltage measurement. Normalized dielectric constant is quantitatively utilized to characterize the dielectric constant variation. The relationship extracted between grain size and dielectric relaxation for CeO2 suggests that tuning properties for improved frequency dispersion can be achieved by controlling grain size, hence, the strain at the nanoscale dimensions.
KW - cerium oxide
KW - dielectric relaxation
KW - grain size
KW - high-A dielectric
UR - http://www.scopus.com/inward/record.url?scp=84885592401&partnerID=8YFLogxK
U2 - 10.1109/IPFA.2013.6599126
DO - 10.1109/IPFA.2013.6599126
M3 - Conference Proceeding
AN - SCOPUS:84885592401
SN - 9781479912414
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
SP - 57
EP - 60
BT - Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013
T2 - 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013
Y2 - 15 July 2013 through 19 July 2013
ER -