Abstract
This article presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.
Original language | English |
---|---|
Pages (from-to) | 1 |
Number of pages | 1 |
Journal | IEEE Electron Device Letters |
Volume | 45 |
Issue number | 10 |
DOIs | |
Publication status | Accepted/In press - 2024 |
Externally published | Yes |
Keywords
- ASM Simulation
- DC-DC Converter
- Gallium nitride
- GaN Circuits
- GaN HEMT
- HEMTs
- Hydrogen
- Hydrogen Plasma Treatment
- Integrated circuit modeling
- Logic gates
- MODFETs
- Monolithic Integration
- Solid modeling