Hydrogen Plasma Treated p-GaN gate HEMTs Integration for DC-DC Converter

Fan Li; Ang Li; Shiqiang Wu; Weisheng Wang; Yuhao Zhu; Guo Hao Yu; Zhongming Zeng; Baoshun Zhang; Jiangmin Gu; Wen Liu

doi:10.1109/LED.2024.3442853

Hydrogen Plasma Treated p-GaN gate HEMTs Integration for DC-DC Converter

Fan Li, Ang Li, Shiqiang Wu, Weisheng Wang, Yuhao Zhu, Guo Hao Yu, Zhongming Zeng, Baoshun Zhang, Jiangmin Gu, Wen Liu

Research output: Contribution to journal › Article › peer-review

Abstract

This article presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.

Original language	English
Pages (from-to)	1
Number of pages	1
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2024.3442853
Publication status	Accepted/In press - 2024
Externally published	Yes

Keywords

ASM Simulation
DC-DC Converter
Gallium nitride
GaN Circuits
GaN HEMT
HEMTs
Hydrogen
Hydrogen Plasma Treatment
Integrated circuit modeling
Logic gates
MODFETs
Monolithic Integration
Solid modeling

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10.1109/LED.2024.3442853

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@article{7c835eb1fd63415bbb6396487c6211ab,

title = "Hydrogen Plasma Treated p-GaN gate HEMTs Integration for DC-DC Converter",

abstract = "This article presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.",

keywords = "ASM Simulation, DC-DC Converter, Gallium nitride, GaN Circuits, GaN HEMT, HEMTs, Hydrogen, Hydrogen Plasma Treatment, Integrated circuit modeling, Logic gates, MODFETs, Monolithic Integration, Solid modeling",

author = "Fan Li and Ang Li and Shiqiang Wu and Weisheng Wang and Yuhao Zhu and Yu, {Guo Hao} and Zhongming Zeng and Baoshun Zhang and Jiangmin Gu and Wen Liu",

note = "Publisher Copyright: IEEE",

year = "2024",

doi = "10.1109/LED.2024.3442853",

language = "English",

pages = "1",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

}

TY - JOUR

T1 - Hydrogen Plasma Treated p-GaN gate HEMTs Integration for DC-DC Converter

AU - Li, Fan

AU - Li, Ang

AU - Wu, Shiqiang

AU - Wang, Weisheng

AU - Zhu, Yuhao

AU - Yu, Guo Hao

AU - Zeng, Zhongming

AU - Zhang, Baoshun

AU - Gu, Jiangmin

AU - Liu, Wen

N1 - Publisher Copyright: IEEE

PY - 2024

Y1 - 2024

N2 - This article presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.

AB - This article presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.

KW - ASM Simulation

KW - DC-DC Converter

KW - Gallium nitride

KW - GaN Circuits

KW - GaN HEMT

KW - HEMTs

KW - Hydrogen

KW - Hydrogen Plasma Treatment

KW - Integrated circuit modeling

KW - Logic gates

KW - MODFETs

KW - Monolithic Integration

KW - Solid modeling

UR - http://www.scopus.com/inward/record.url?scp=85201283457&partnerID=8YFLogxK

U2 - 10.1109/LED.2024.3442853

DO - 10.1109/LED.2024.3442853

M3 - Article

AN - SCOPUS:85201283457

SN - 0741-3106

SP - 1

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Hydrogen Plasma Treated p-GaN gate HEMTs Integration for DC-DC Converter

Abstract

Keywords

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