High-Performance Optical NOR Gate with SOA-MZI

Amer Kotb; Kyriakos E. Zoiros; Wei Chen

doi:10.3390/photonics12030179

High-Performance Optical NOR Gate with SOA-MZI

Amer Kotb^*, Kyriakos E. Zoiros, Wei Chen^*

^*Corresponding author for this work

School of CHIPS

Democritus University of Thrace

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we propose a novel design for a NOR gate using a semiconductor optical amplifier combined with a Mach–Zehnder interferometer. By utilizing two inverting input signals, the system achieves the NOR logic function, simplifying the overall architecture and reducing component complexity. The gate’s performance is evaluated at 80 Gb/s, achieving a high-quality factor of 23.47, demonstrating superior signal integrity and reliability. We analyze the influence of key parameters on the gate’s functionality and assess the impact of amplified spontaneous emission on system performance. This study provides a comprehensive evaluation of the NOR gate and contributes to developing efficient, cost-effective solutions for complex optical logic circuits.

Original language	English
Article number	179
Journal	Photonics
Volume	12
Issue number	3
DOIs	https://doi.org/10.3390/photonics12030179
Publication status	Published - Mar 2025

Keywords

amplified spontaneous emission
Mach–Zehnder interferometer
NOR gate
quality factor
semiconductor optical amplifier

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10.3390/photonics12030179

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@article{d67943ed33e041988a1a826553753349,

title = "High-Performance Optical NOR Gate with SOA-MZI",

abstract = "In this paper, we propose a novel design for a NOR gate using a semiconductor optical amplifier combined with a Mach–Zehnder interferometer. By utilizing two inverting input signals, the system achieves the NOR logic function, simplifying the overall architecture and reducing component complexity. The gate{\textquoteright}s performance is evaluated at 80 Gb/s, achieving a high-quality factor of 23.47, demonstrating superior signal integrity and reliability. We analyze the influence of key parameters on the gate{\textquoteright}s functionality and assess the impact of amplified spontaneous emission on system performance. This study provides a comprehensive evaluation of the NOR gate and contributes to developing efficient, cost-effective solutions for complex optical logic circuits.",

keywords = "amplified spontaneous emission, Mach–Zehnder interferometer, NOR gate, quality factor, semiconductor optical amplifier",

author = "Amer Kotb and Zoiros, {Kyriakos E.} and Wei Chen",

note = "Publisher Copyright: {\textcopyright} 2025 by the authors.",

year = "2025",

month = mar,

doi = "10.3390/photonics12030179",

language = "English",

volume = "12",

journal = "Photonics",

issn = "2304-6732",

number = "3",

}

TY - JOUR

T1 - High-Performance Optical NOR Gate with SOA-MZI

AU - Kotb, Amer

AU - Zoiros, Kyriakos E.

AU - Chen, Wei

PY - 2025/3

Y1 - 2025/3

N2 - In this paper, we propose a novel design for a NOR gate using a semiconductor optical amplifier combined with a Mach–Zehnder interferometer. By utilizing two inverting input signals, the system achieves the NOR logic function, simplifying the overall architecture and reducing component complexity. The gate’s performance is evaluated at 80 Gb/s, achieving a high-quality factor of 23.47, demonstrating superior signal integrity and reliability. We analyze the influence of key parameters on the gate’s functionality and assess the impact of amplified spontaneous emission on system performance. This study provides a comprehensive evaluation of the NOR gate and contributes to developing efficient, cost-effective solutions for complex optical logic circuits.

AB - In this paper, we propose a novel design for a NOR gate using a semiconductor optical amplifier combined with a Mach–Zehnder interferometer. By utilizing two inverting input signals, the system achieves the NOR logic function, simplifying the overall architecture and reducing component complexity. The gate’s performance is evaluated at 80 Gb/s, achieving a high-quality factor of 23.47, demonstrating superior signal integrity and reliability. We analyze the influence of key parameters on the gate’s functionality and assess the impact of amplified spontaneous emission on system performance. This study provides a comprehensive evaluation of the NOR gate and contributes to developing efficient, cost-effective solutions for complex optical logic circuits.

KW - amplified spontaneous emission

KW - Mach–Zehnder interferometer

KW - NOR gate

KW - quality factor

KW - semiconductor optical amplifier

UR - http://www.scopus.com/inward/record.url?scp=105001350721&partnerID=8YFLogxK

U2 - 10.3390/photonics12030179

DO - 10.3390/photonics12030179

M3 - Article

AN - SCOPUS:105001350721

SN - 2304-6732

VL - 12

JO - Photonics

JF - Photonics

IS - 3

M1 - 179

ER -

High-Performance Optical NOR Gate with SOA-MZI

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