High-k materials and their response to gamma ray radiation

C. Z. Zhao; S. Taylor; M. Werner; P. R. Chalker; R. J. Potter; J. M. Gaskell; A. C. Jones

doi:10.1116/1.3071848

High-k materials and their response to gamma ray radiation

C. Z. Zhao, S. Taylor, M. Werner, P. R. Chalker, R. J. Potter, J. M. Gaskell, A. C. Jones

School of Advanced Technology

University of Liverpool

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The radiation response of four different high- k materials has been investigated by irradiating them using a 979 MBq Cs137 γ -ray source and a dose absorption rate of 0.71 rad (Si) s. Acceptorlike electron traps and donorlike traps were observed in Hf O2 and Zr O2 metal-oxide-semiconductor capacitors originating from radiation-induced defects. A lower density of donor-like traps were created in LaAl O3 and NdAl O3 capacitors, but both electron and hole trapping play a role in shifting the flat band voltage. The radiation hardness of the LaAl O3 and NdAl O3 thin films is similar to thermal Si O2 but better than the Hf O2 and Zr O2.

Original language	English
Pages (from-to)	411-415
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3071848
Publication status	Published - 2009

Access to Document

10.1116/1.3071848

Cite this

@article{02dadd89bc894e699e386aa5bf0d93dc,

title = "High-k materials and their response to gamma ray radiation",

abstract = "The radiation response of four different high- k materials has been investigated by irradiating them using a 979 MBq Cs137 γ -ray source and a dose absorption rate of 0.71 rad (Si) s. Acceptorlike electron traps and donorlike traps were observed in Hf O2 and Zr O2 metal-oxide-semiconductor capacitors originating from radiation-induced defects. A lower density of donor-like traps were created in LaAl O3 and NdAl O3 capacitors, but both electron and hole trapping play a role in shifting the flat band voltage. The radiation hardness of the LaAl O3 and NdAl O3 thin films is similar to thermal Si O2 but better than the Hf O2 and Zr O2.",

author = "Zhao, {C. Z.} and S. Taylor and M. Werner and Chalker, {P. R.} and Potter, {R. J.} and Gaskell, {J. M.} and Jones, {A. C.}",

note = "Funding Information: This research was funded in part from the Engineering and Physical Science Research Council of UK under the Grant No. EP/D068606/1 and SAFC Hitech Ltd. The authors would like to thank Mr. R.J. Beckley for supplying the radiation source. ",

year = "2009",

doi = "10.1116/1.3071848",

language = "English",

volume = "27",

pages = "411--415",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "1",

}

TY - JOUR

T1 - High-k materials and their response to gamma ray radiation

AU - Zhao, C. Z.

AU - Taylor, S.

AU - Werner, M.

AU - Chalker, P. R.

AU - Potter, R. J.

AU - Gaskell, J. M.

AU - Jones, A. C.

N1 - Funding Information: This research was funded in part from the Engineering and Physical Science Research Council of UK under the Grant No. EP/D068606/1 and SAFC Hitech Ltd. The authors would like to thank Mr. R.J. Beckley for supplying the radiation source.

PY - 2009

Y1 - 2009

N2 - The radiation response of four different high- k materials has been investigated by irradiating them using a 979 MBq Cs137 γ -ray source and a dose absorption rate of 0.71 rad (Si) s. Acceptorlike electron traps and donorlike traps were observed in Hf O2 and Zr O2 metal-oxide-semiconductor capacitors originating from radiation-induced defects. A lower density of donor-like traps were created in LaAl O3 and NdAl O3 capacitors, but both electron and hole trapping play a role in shifting the flat band voltage. The radiation hardness of the LaAl O3 and NdAl O3 thin films is similar to thermal Si O2 but better than the Hf O2 and Zr O2.

AB - The radiation response of four different high- k materials has been investigated by irradiating them using a 979 MBq Cs137 γ -ray source and a dose absorption rate of 0.71 rad (Si) s. Acceptorlike electron traps and donorlike traps were observed in Hf O2 and Zr O2 metal-oxide-semiconductor capacitors originating from radiation-induced defects. A lower density of donor-like traps were created in LaAl O3 and NdAl O3 capacitors, but both electron and hole trapping play a role in shifting the flat band voltage. The radiation hardness of the LaAl O3 and NdAl O3 thin films is similar to thermal Si O2 but better than the Hf O2 and Zr O2.

UR - http://www.scopus.com/inward/record.url?scp=59949105648&partnerID=8YFLogxK

U2 - 10.1116/1.3071848

DO - 10.1116/1.3071848

M3 - Article

AN - SCOPUS:59949105648

SN - 1071-1023

VL - 27

SP - 411

EP - 415

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

High-k materials and their response to gamma ray radiation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this