High-k dielectrics' radiation response to X-ray and γ-ray exposure

C. Z. Zhao; M. Wemer; S. Taylor; P. R. Chalker; R. J. Potter; J. Gaskell

doi:10.1109/IPFA.2009.5232565

High-k dielectrics' radiation response to X-ray and γ-ray exposure

C. Z. Zhao, M. Wemer, S. Taylor, P. R. Chalker, R. J. Potter, J. Gaskell

School of Advanced Technology

University of Liverpool

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

4 Citations (Scopus)

Abstract

Radiation-induced degradation of HfO ₂, ZrO ₂' LaAIO ₃, and NdAIO ₃ thin films was studied and compared based on a Fe ⁵⁵ X-ray source and Cs ¹³⁷137 γ-ray source . After the X-ray exposure of a total dose of lOOkrad, negative VFB shifts were observed in these thin films, whereas after the γ-ray exposures of the same dose, positive VFB shifts was observed.

Original language	English
Title of host publication	Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages	628-630
Number of pages	3
DOIs	https://doi.org/10.1109/IPFA.2009.5232565
Publication status	Published - 2009
Event	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China Duration: 6 Jul 2009 → 10 Jul 2009

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/Territory	China
City	Suzhou
Period	6/07/09 → 10/07/09

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10.1109/IPFA.2009.5232565

Cite this

Zhao, C. Z., Wemer, M., Taylor, S., Chalker, P. R., Potter, R. J., & Gaskell, J. (2009). High-k dielectrics' radiation response to X-ray and γ-ray exposure. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 (pp. 628-630). Article 5232565 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2009.5232565

Zhao, C. Z. ; Wemer, M. ; Taylor, S. et al. / High-k dielectrics' radiation response to X-ray and γ-ray exposure. Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. pp. 628-630 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{9dcd991048064db387807f0a96de6812,

title = "High-k dielectrics' radiation response to X-ray and γ-ray exposure",

abstract = "Radiation-induced degradation of HfO 2, ZrO 2' LaAIO 3, and NdAIO 3 thin films was studied and compared based on a Fe 55 X-ray source and Cs 137137 γ-ray source . After the X-ray exposure of a total dose of lOOkrad, negative VFB shifts were observed in these thin films, whereas after the γ-ray exposures of the same dose, positive VFB shifts was observed.",

author = "Zhao, {C. Z.} and M. Wemer and S. Taylor and Chalker, {P. R.} and Potter, {R. J.} and J. Gaskell",

year = "2009",

doi = "10.1109/IPFA.2009.5232565",

language = "English",

isbn = "9781424439102",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "628--630",

booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",

note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",

}

Zhao, CZ, Wemer, M, Taylor, S, Chalker, PR, Potter, RJ & Gaskell, J 2009, High-k dielectrics' radiation response to X-ray and γ-ray exposure. in Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009., 5232565, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 628-630, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009, Suzhou, China, 6/07/09. https://doi.org/10.1109/IPFA.2009.5232565

High-k dielectrics' radiation response to X-ray and γ-ray exposure. / Zhao, C. Z.; Wemer, M.; Taylor, S. et al.
Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 628-630 5232565 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AU - Taylor, S.

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AU - Potter, R. J.

AU - Gaskell, J.

PY - 2009

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N2 - Radiation-induced degradation of HfO 2, ZrO 2' LaAIO 3, and NdAIO 3 thin films was studied and compared based on a Fe 55 X-ray source and Cs 137137 γ-ray source . After the X-ray exposure of a total dose of lOOkrad, negative VFB shifts were observed in these thin films, whereas after the γ-ray exposures of the same dose, positive VFB shifts was observed.

AB - Radiation-induced degradation of HfO 2, ZrO 2' LaAIO 3, and NdAIO 3 thin films was studied and compared based on a Fe 55 X-ray source and Cs 137137 γ-ray source . After the X-ray exposure of a total dose of lOOkrad, negative VFB shifts were observed in these thin films, whereas after the γ-ray exposures of the same dose, positive VFB shifts was observed.

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DO - 10.1109/IPFA.2009.5232565

M3 - Conference Proceeding

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SN - 9781424439102

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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BT - Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

T2 - 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

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Zhao CZ, Wemer M, Taylor S, Chalker PR, Potter RJ, Gaskell J. High-k dielectrics' radiation response to X-ray and γ-ray exposure. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 628-630. 5232565. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2009.5232565

High-k dielectrics' radiation response to X-ray and γ-ray exposure

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