High frequency performance of large-grain polysilicon-on-insulator MOSFETs

H. Wang; S. Jagar; S. Lam; M. Chan

doi:10.1109/16.930672

High frequency performance of large-grain polysilicon-on-insulator MOSFETs

H. Wang^*, S. Jagar, S. Lam, M. Chan

^*Corresponding author for this work

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Large-grain polysilicon-on-insulator (LPSOI) MOSFETs, formed from amorphous silicon by high-temperature metal-induced-lateral-crystallization (MILC) have been reported to operate in gigahertz range for the first time. Large dimensional (W/L = 240/1.2 μm) LPSOI NMOSFETs and PMOSFETs display a maximum transconductance (g_{m max}) = 68 mS/mm and 48 mS/mm at V_DS = 3 V, respectively. The unity short circuit current gain frequencies (f_T) of NMOSFET and PMOSFET have been found to reach 3.4 GHz and 2.6 GHz at channel length of 1.2 μm. With channel length scaling, higher f_T can be achieved and have been demonstrated with the measured value of 5.1 GHz f_T for PMOSFET with a channel length of 0.7 μm. The f_T value obtained is the highest among silicon FETs fabricated on nonsingle crystal silicon substrates.

Original language	English
Pages (from-to)	1480-1482
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	7
DOIs	https://doi.org/10.1109/16.930672
Publication status	Published - Jul 2001
Externally published	Yes

Keywords

Large-grain polysilicon-on-insulator (LGSOI)
MOSFETs
Unity short circuit current gain frequency

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10.1109/16.930672

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title = "High frequency performance of large-grain polysilicon-on-insulator MOSFETs",

abstract = "Large-grain polysilicon-on-insulator (LPSOI) MOSFETs, formed from amorphous silicon by high-temperature metal-induced-lateral-crystallization (MILC) have been reported to operate in gigahertz range for the first time. Large dimensional (W/L = 240/1.2 μm) LPSOI NMOSFETs and PMOSFETs display a maximum transconductance (gm max) = 68 mS/mm and 48 mS/mm at VDS = 3 V, respectively. The unity short circuit current gain frequencies (fT) of NMOSFET and PMOSFET have been found to reach 3.4 GHz and 2.6 GHz at channel length of 1.2 μm. With channel length scaling, higher fT can be achieved and have been demonstrated with the measured value of 5.1 GHz fT for PMOSFET with a channel length of 0.7 μm. The fT value obtained is the highest among silicon FETs fabricated on nonsingle crystal silicon substrates.",

keywords = "Large-grain polysilicon-on-insulator (LGSOI), MOSFETs, Unity short circuit current gain frequency",

author = "H. Wang and S. Jagar and S. Lam and M. Chan",

note = "Funding Information: Manuscript received November 6, 2000; revised March 22, 2001. This work was supported by a Competitive Earmarked Research Grant from Research Grant Council of Hong Kong. The review of this brief was arranged by Editor J. Vasi.",

year = "2001",

month = jul,

doi = "10.1109/16.930672",

language = "English",

volume = "48",

pages = "1480--1482",

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T1 - High frequency performance of large-grain polysilicon-on-insulator MOSFETs

AU - Wang, H.

AU - Jagar, S.

AU - Lam, S.

AU - Chan, M.

N1 - Funding Information: Manuscript received November 6, 2000; revised March 22, 2001. This work was supported by a Competitive Earmarked Research Grant from Research Grant Council of Hong Kong. The review of this brief was arranged by Editor J. Vasi.

PY - 2001/7

Y1 - 2001/7

N2 - Large-grain polysilicon-on-insulator (LPSOI) MOSFETs, formed from amorphous silicon by high-temperature metal-induced-lateral-crystallization (MILC) have been reported to operate in gigahertz range for the first time. Large dimensional (W/L = 240/1.2 μm) LPSOI NMOSFETs and PMOSFETs display a maximum transconductance (gm max) = 68 mS/mm and 48 mS/mm at VDS = 3 V, respectively. The unity short circuit current gain frequencies (fT) of NMOSFET and PMOSFET have been found to reach 3.4 GHz and 2.6 GHz at channel length of 1.2 μm. With channel length scaling, higher fT can be achieved and have been demonstrated with the measured value of 5.1 GHz fT for PMOSFET with a channel length of 0.7 μm. The fT value obtained is the highest among silicon FETs fabricated on nonsingle crystal silicon substrates.

AB - Large-grain polysilicon-on-insulator (LPSOI) MOSFETs, formed from amorphous silicon by high-temperature metal-induced-lateral-crystallization (MILC) have been reported to operate in gigahertz range for the first time. Large dimensional (W/L = 240/1.2 μm) LPSOI NMOSFETs and PMOSFETs display a maximum transconductance (gm max) = 68 mS/mm and 48 mS/mm at VDS = 3 V, respectively. The unity short circuit current gain frequencies (fT) of NMOSFET and PMOSFET have been found to reach 3.4 GHz and 2.6 GHz at channel length of 1.2 μm. With channel length scaling, higher fT can be achieved and have been demonstrated with the measured value of 5.1 GHz fT for PMOSFET with a channel length of 0.7 μm. The fT value obtained is the highest among silicon FETs fabricated on nonsingle crystal silicon substrates.

KW - Large-grain polysilicon-on-insulator (LGSOI)

KW - MOSFETs

KW - Unity short circuit current gain frequency

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

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High frequency performance of large-grain polysilicon-on-insulator MOSFETs

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Keywords

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