Growth of WS₂ flakes on Ti₃C₂T_x mxene using vapor transportation routine

Two-dimensional dichalcogenides (TMDs) and mxene junctions had been predicted to possess distinct tunable electronic properties. However, direct synthesis of WS₂ on Ti₃C₂T_x mxene is still challenging. Herein, we successfully deposited WS₂ onto the surface of Ti₃C₂T_x mxene by employing the vapor transportation (VT) routine. By modulating pressure and source-sample distance, multilayer and monolayer (1 L) WS₂ flakes were deposited onto the lateral side and top surface of Ti₃C₂T_x flakes. The 1 L WS₂ flakes growing on lateral side of Ti₃C₂T_x flake have much higher photoluminescence (PL) intensity than 1 L flakes growing on the top surface. Our study has the potential to benefit the design and preparation of novel electronic and electrochemical devices based on TMDs/mxene junctions.