GaN/InGaN/GaN disk-in-wire light emitters: Polar vs. nonpolar orientations

Md R. Nishat; S. Alqahtani; Y. Wu; V. Chimalgi; S. Ahmed

doi:10.1109/IWCE.2015.7301936

GaN/InGaN/GaN disk-in-wire light emitters: Polar vs. nonpolar orientations

Md R. Nishat, S. Alqahtani, Y. Wu, V. Chimalgi, S. Ahmed

Southern Illinois University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

4 Citations (Scopus)

Abstract

In this paper, we computationally evaluate and compare the performance of recently reported In_0.25Ga_0.75N/GaN disk-in-wire light emitting diodes (LED) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. The microscopically determined transi-tion parameters were then incorporated into a TCAD LED sim-ulator to obtain the device terminal characteristics. The m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (IQE) characteristic.

Original language	English
Title of host publication	18th International Workshop on Computational Electronics, IWCE 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9780692515235
DOIs	https://doi.org/10.1109/IWCE.2015.7301936
Publication status	Published - 19 Oct 2015
Externally published	Yes
Event	18th International Workshop on Computational Electronics, IWCE 2015 - West Lafayette, United States Duration: 2 Sept 2015 → 4 Sept 2015

Publication series

Name	18th International Workshop on Computational Electronics, IWCE 2015

Conference

Conference	18th International Workshop on Computational Electronics, IWCE 2015
Country/Territory	United States
City	West Lafayette
Period	2/09/15 → 4/09/15

Keywords

InGaN disk-in-wire LED
QuADS 3-D
efficiency droop
non-polar direction
piezoelectricity
solid-state lighting

Access to Document

10.1109/IWCE.2015.7301936

Cite this

Nishat, M. R., Alqahtani, S., Wu, Y., Chimalgi, V., & Ahmed, S. (2015). GaN/InGaN/GaN disk-in-wire light emitters: Polar vs. nonpolar orientations. In 18th International Workshop on Computational Electronics, IWCE 2015 Article 7301936 (18th International Workshop on Computational Electronics, IWCE 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.2015.7301936

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title = "GaN/InGaN/GaN disk-in-wire light emitters: Polar vs. nonpolar orientations",

abstract = "In this paper, we computationally evaluate and compare the performance of recently reported In0.25Ga0.75N/GaN disk-in-wire light emitting diodes (LED) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. The microscopically determined transi-tion parameters were then incorporated into a TCAD LED sim-ulator to obtain the device terminal characteristics. The m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (IQE) characteristic.",

keywords = "InGaN disk-in-wire LED, QuADS 3-D, efficiency droop, non-polar direction, piezoelectricity, solid-state lighting",

author = "Nishat, {Md R.} and S. Alqahtani and Y. Wu and V. Chimalgi and S. Ahmed",

note = "Publisher Copyright: {\textcopyright} 2015 IWCE.; 18th International Workshop on Computational Electronics, IWCE 2015 ; Conference date: 02-09-2015 Through 04-09-2015",

year = "2015",

month = oct,

day = "19",

doi = "10.1109/IWCE.2015.7301936",

language = "English",

series = "18th International Workshop on Computational Electronics, IWCE 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Nishat, MR, Alqahtani, S, Wu, Y, Chimalgi, V & Ahmed, S 2015, GaN/InGaN/GaN disk-in-wire light emitters: Polar vs. nonpolar orientations. in 18th International Workshop on Computational Electronics, IWCE 2015., 7301936, 18th International Workshop on Computational Electronics, IWCE 2015, Institute of Electrical and Electronics Engineers Inc., 18th International Workshop on Computational Electronics, IWCE 2015, West Lafayette, United States, 2/09/15. https://doi.org/10.1109/IWCE.2015.7301936

GaN/InGaN/GaN disk-in-wire light emitters: Polar vs. nonpolar orientations. / Nishat, Md R.; Alqahtani, S.; Wu, Y. et al.
18th International Workshop on Computational Electronics, IWCE 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7301936 (18th International Workshop on Computational Electronics, IWCE 2015).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T2 - 18th International Workshop on Computational Electronics, IWCE 2015

AU - Nishat, Md R.

AU - Alqahtani, S.

AU - Wu, Y.

AU - Chimalgi, V.

AU - Ahmed, S.

PY - 2015/10/19

Y1 - 2015/10/19

N2 - In this paper, we computationally evaluate and compare the performance of recently reported In0.25Ga0.75N/GaN disk-in-wire light emitting diodes (LED) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. The microscopically determined transi-tion parameters were then incorporated into a TCAD LED sim-ulator to obtain the device terminal characteristics. The m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (IQE) characteristic.

AB - In this paper, we computationally evaluate and compare the performance of recently reported In0.25Ga0.75N/GaN disk-in-wire light emitting diodes (LED) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. The microscopically determined transi-tion parameters were then incorporated into a TCAD LED sim-ulator to obtain the device terminal characteristics. The m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (IQE) characteristic.

KW - InGaN disk-in-wire LED

KW - QuADS 3-D

KW - efficiency droop

KW - non-polar direction

KW - piezoelectricity

KW - solid-state lighting

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Nishat MR, Alqahtani S, Wu Y, Chimalgi V, Ahmed S. GaN/InGaN/GaN disk-in-wire light emitters: Polar vs. nonpolar orientations. In 18th International Workshop on Computational Electronics, IWCE 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7301936. (18th International Workshop on Computational Electronics, IWCE 2015). doi: 10.1109/IWCE.2015.7301936

GaN/InGaN/GaN disk-in-wire light emitters: Polar vs. nonpolar orientations

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