Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route

Q. H. Liu; Y. L. Wei; Y. X. Cao; C. Zhao; C. Z. Zhao; I. Z. Mitrovic; S. Hall; W. Y. Xu; L. Yang; E. G. Lim; Q. N. Wang

doi:10.1109/EUROSOI-ULIS45800.2019.9041881

Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route

Q. H. Liu, Y. L. Wei, Y. X. Cao, C. Zhao, C. Z. Zhao^*, I. Z. Mitrovic, S. Hall, W. Y. Xu, L. Yang, E. G. Lim, Q. N. Wang

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

In this study, we develop a simple and eco-friendly aqueous route for the fabrication of sodium (Na) doped ZnO/AlO_xthin-film transistors (TFTs). To prepare Na doped ZnO and AlO_xthin films, ammonia water and deionized water were used as the precursor solvents. The A1O_xthin film annealed at 300°C showed an areal-capacitance of 129 nf/cm² at 1 kHz. On the basis of its implementation as the gate oxide, fully solution-processed Na doped ZnO TFTs were fabricated and the electrical characteristics were systematically studied. The fully solution processed Na doped ZnO/A1O_xTFTs exhibited a high field effect mobility of 21 cm² V^-1 s^-1, a subthreshold swing of 0.58 V/decade, a threshold voltage of 0.8 V, and an on/off current ratio of 2×104.

Original language	English
Title of host publication	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728116587
DOIs	https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041881
Publication status	Published - Apr 2019
Event	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France Duration: 1 Apr 2019 → 3 Apr 2019

Publication series

Name	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Conference

Conference	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Country/Territory	France
City	Grenoble
Period	1/04/19 → 3/04/19

Keywords

aqueous route
low-temperature
metal oxide thin-film transistors
solution-processed

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10.1109/EUROSOI-ULIS45800.2019.9041881

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Liu, Q. H., Wei, Y. L., Cao, Y. X., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., Yang, L., Lim, E. G., & Wang, Q. N. (2019). Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 Article 9041881 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041881

Liu, Q. H. ; Wei, Y. L. ; Cao, Y. X. et al. / Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

@inproceedings{0a38bd195f8f44668c4b76563f8d948d,

title = "Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route",

abstract = "In this study, we develop a simple and eco-friendly aqueous route for the fabrication of sodium (Na) doped ZnO/AlOxthin-film transistors (TFTs). To prepare Na doped ZnO and AlOxthin films, ammonia water and deionized water were used as the precursor solvents. The A1Oxthin film annealed at 300°C showed an areal-capacitance of 129 nf/cm2 at 1 kHz. On the basis of its implementation as the gate oxide, fully solution-processed Na doped ZnO TFTs were fabricated and the electrical characteristics were systematically studied. The fully solution processed Na doped ZnO/A1OxTFTs exhibited a high field effect mobility of 21 cm2 V-1 s-1, a subthreshold swing of 0.58 V/decade, a threshold voltage of 0.8 V, and an on/off current ratio of 2×104.",

keywords = "aqueous route, low-temperature, metal oxide thin-film transistors, solution-processed",

author = "Liu, {Q. H.} and Wei, {Y. L.} and Cao, {Y. X.} and C. Zhao and Zhao, {C. Z.} and Mitrovic, {I. Z.} and S. Hall and Xu, {W. Y.} and L. Yang and Lim, {E. G.} and Wang, {Q. N.}",

note = "Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, and 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05 and KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 ; Conference date: 01-04-2019 Through 03-04-2019",

year = "2019",

month = apr,

doi = "10.1109/EUROSOI-ULIS45800.2019.9041881",

language = "English",

series = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

}

Liu, QH, Wei, YL, Cao, YX, Zhao, C, Zhao, CZ, Mitrovic, IZ, Hall, S, Xu, WY, Yang, L , Lim, EG & Wang, QN 2019, Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. in 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019., 9041881, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Grenoble, France, 1/04/19. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041881

Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. / Liu, Q. H.; Wei, Y. L.; Cao, Y. X. et al.
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9041881 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route

AU - Liu, Q. H.

AU - Wei, Y. L.

AU - Cao, Y. X.

AU - Zhao, C.

AU - Zhao, C. Z.

AU - Mitrovic, I. Z.

AU - Hall, S.

AU - Xu, W. Y.

AU - Yang, L.

AU - Lim, E. G.

AU - Wang, Q. N.

N1 - Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, and 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05 and KSF-A-07). Publisher Copyright: © 2019 IEEE.

PY - 2019/4

Y1 - 2019/4

N2 - In this study, we develop a simple and eco-friendly aqueous route for the fabrication of sodium (Na) doped ZnO/AlOxthin-film transistors (TFTs). To prepare Na doped ZnO and AlOxthin films, ammonia water and deionized water were used as the precursor solvents. The A1Oxthin film annealed at 300°C showed an areal-capacitance of 129 nf/cm2 at 1 kHz. On the basis of its implementation as the gate oxide, fully solution-processed Na doped ZnO TFTs were fabricated and the electrical characteristics were systematically studied. The fully solution processed Na doped ZnO/A1OxTFTs exhibited a high field effect mobility of 21 cm2 V-1 s-1, a subthreshold swing of 0.58 V/decade, a threshold voltage of 0.8 V, and an on/off current ratio of 2×104.

AB - In this study, we develop a simple and eco-friendly aqueous route for the fabrication of sodium (Na) doped ZnO/AlOxthin-film transistors (TFTs). To prepare Na doped ZnO and AlOxthin films, ammonia water and deionized water were used as the precursor solvents. The A1Oxthin film annealed at 300°C showed an areal-capacitance of 129 nf/cm2 at 1 kHz. On the basis of its implementation as the gate oxide, fully solution-processed Na doped ZnO TFTs were fabricated and the electrical characteristics were systematically studied. The fully solution processed Na doped ZnO/A1OxTFTs exhibited a high field effect mobility of 21 cm2 V-1 s-1, a subthreshold swing of 0.58 V/decade, a threshold voltage of 0.8 V, and an on/off current ratio of 2×104.

KW - aqueous route

KW - low-temperature

KW - metal oxide thin-film transistors

KW - solution-processed

UR - http://www.scopus.com/inward/record.url?scp=85083267343&partnerID=8YFLogxK

U2 - 10.1109/EUROSOI-ULIS45800.2019.9041881

DO - 10.1109/EUROSOI-ULIS45800.2019.9041881

M3 - Conference Proceeding

AN - SCOPUS:85083267343

T3 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

BT - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Y2 - 1 April 2019 through 3 April 2019

ER -

Liu QH, Wei YL, Cao YX, Zhao C, Zhao CZ, Mitrovic IZ et al. Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9041881. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). doi: 10.1109/EUROSOI-ULIS45800.2019.9041881

Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route

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