TY - JOUR
T1 - Full-vdW Heterosynaptic Memtransistor with the Ferroelectric Inserted Functional Layer and its Neuromorphic Applications
AU - Shen, Zongjie
AU - Li, Alei
AU - Wang, Qinan
AU - Cao, Yixin
AU - Sun, Yi
AU - Yao, Jian
AU - Liu, Zhengjun
AU - Zhang, Yong
AU - Kang, Lixing
AU - Zhao, Chun
AU - Zeng, Zhongming
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024
Y1 - 2024
N2 - The emergence of 2D van der Waals (vdW) materials, owing to highly tunable electrical conductivity, remarkably free stackability, and excellent compatibility for heterojunction integration, has provided abundant research diversity of artificial synapses. Here, an innovative 2D vdW heterosynaptic memtransistor (vdW-HT) synapse is proposed with a ferroelectric CuInP2S6 inserted layer. Neuromorphic synaptic weight change of the vdW-HT synapse in this work are modulated by the synergistic effects of interlayer coupling and ferroelectric polarization reversal. It is the first time to evaluate the required initial energy consumption of ferroelectric vdW-HT synapses with matrixed biomimetic characteristics of “Learning–Forgetting–Re-learning–Memorizing.” The required initial energy consumption is only ≈3.06 pJ, which provided supporting evidence to indicate the promising potential of vdW-HT synapses in exploring neuromorphic applications. A vdW-HT computing system with artificial recognition capability for intelligent automobiles is established and demonstrated outstanding recognition abilities for multiple targets in various environments. The highest recognition accuracy for pedestrians is 98%. In addition, the excellent recognition property is integrated with a robotic arm, successfully achieving high-precision grasping behavior and designated position transmission for identified targets. These results provide promising strategies for the integrated development of emerging neuromorphic electronics and industrial applications.
AB - The emergence of 2D van der Waals (vdW) materials, owing to highly tunable electrical conductivity, remarkably free stackability, and excellent compatibility for heterojunction integration, has provided abundant research diversity of artificial synapses. Here, an innovative 2D vdW heterosynaptic memtransistor (vdW-HT) synapse is proposed with a ferroelectric CuInP2S6 inserted layer. Neuromorphic synaptic weight change of the vdW-HT synapse in this work are modulated by the synergistic effects of interlayer coupling and ferroelectric polarization reversal. It is the first time to evaluate the required initial energy consumption of ferroelectric vdW-HT synapses with matrixed biomimetic characteristics of “Learning–Forgetting–Re-learning–Memorizing.” The required initial energy consumption is only ≈3.06 pJ, which provided supporting evidence to indicate the promising potential of vdW-HT synapses in exploring neuromorphic applications. A vdW-HT computing system with artificial recognition capability for intelligent automobiles is established and demonstrated outstanding recognition abilities for multiple targets in various environments. The highest recognition accuracy for pedestrians is 98%. In addition, the excellent recognition property is integrated with a robotic arm, successfully achieving high-precision grasping behavior and designated position transmission for identified targets. These results provide promising strategies for the integrated development of emerging neuromorphic electronics and industrial applications.
KW - artificial synapse
KW - ferroelectric polarization reversal
KW - functional ferroelectrics
KW - heterosynaptic memtransistor
KW - neuromorphic applications
UR - http://www.scopus.com/inward/record.url?scp=85204119761&partnerID=8YFLogxK
U2 - 10.1002/adfm.202412832
DO - 10.1002/adfm.202412832
M3 - Article
AN - SCOPUS:85204119761
SN - 1616-301X
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -