Frequency dispersion and dielectric relaxation of La2 Hf2 O7

C. Z. Zhao; S. Taylor; M. Werner; P. R. Chalker; J. M. Gaskell; A. C. Jones

doi:10.1116/1.3043535

Frequency dispersion and dielectric relaxation of La2 Hf2 O7

C. Z. Zhao, S. Taylor, M. Werner, P. R. Chalker, J. M. Gaskell, A. C. Jones

School of Advanced Technology

University of Liverpool

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Thin films of La2 Hf2 O7 have been deposited by liquid injection atomic layer deposition and post-deposition annealed at 900 °C. The dielectric frequency dispersion was more serious for thinner films which is attributed to the effect of a lossy interfacial layer between the La2 Hf2 O7 dielectric and silicon substrate. The effect of the interfacial layer was modeled based on a dual-frequency measurement technique. The dielectric relaxation of the La2 Hf2 O7 thin films was modelled using both the Curie-von Schweidler and Havriliak-Negami relationships. Post deposition annealing in nitrogen at 900 °C for 15 min improved dielectric relaxation and reduced the dielectric loss.

Original language	English
Pages (from-to)	333-337
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3043535
Publication status	Published - 2009

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title = "Frequency dispersion and dielectric relaxation of La2 Hf2 O7",

abstract = "Thin films of La2 Hf2 O7 have been deposited by liquid injection atomic layer deposition and post-deposition annealed at 900 °C. The dielectric frequency dispersion was more serious for thinner films which is attributed to the effect of a lossy interfacial layer between the La2 Hf2 O7 dielectric and silicon substrate. The effect of the interfacial layer was modeled based on a dual-frequency measurement technique. The dielectric relaxation of the La2 Hf2 O7 thin films was modelled using both the Curie-von Schweidler and Havriliak-Negami relationships. Post deposition annealing in nitrogen at 900 °C for 15 min improved dielectric relaxation and reduced the dielectric loss.",

author = "Zhao, {C. Z.} and S. Taylor and M. Werner and Chalker, {P. R.} and Gaskell, {J. M.} and Jones, {A. C.}",

note = "Funding Information: This research was funded in part by the Engineering and Physical Science Research Council of the U.K. under the Grant No. EP/D068606/1 and SAFC Hitech Ltd. Dr. Zhao would like to thank Professor J. F. Zhang (Liverpool John Moores University) for allowing the use of their IMEC samples. Dr. Y. Lu (Liverpool University) is acknowledged for helpful discussion. ",

year = "2009",

doi = "10.1116/1.3043535",

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T1 - Frequency dispersion and dielectric relaxation of La2 Hf2 O7

AU - Zhao, C. Z.

AU - Taylor, S.

AU - Werner, M.

AU - Chalker, P. R.

AU - Gaskell, J. M.

AU - Jones, A. C.

N1 - Funding Information: This research was funded in part by the Engineering and Physical Science Research Council of the U.K. under the Grant No. EP/D068606/1 and SAFC Hitech Ltd. Dr. Zhao would like to thank Professor J. F. Zhang (Liverpool John Moores University) for allowing the use of their IMEC samples. Dr. Y. Lu (Liverpool University) is acknowledged for helpful discussion.

PY - 2009

Y1 - 2009

N2 - Thin films of La2 Hf2 O7 have been deposited by liquid injection atomic layer deposition and post-deposition annealed at 900 °C. The dielectric frequency dispersion was more serious for thinner films which is attributed to the effect of a lossy interfacial layer between the La2 Hf2 O7 dielectric and silicon substrate. The effect of the interfacial layer was modeled based on a dual-frequency measurement technique. The dielectric relaxation of the La2 Hf2 O7 thin films was modelled using both the Curie-von Schweidler and Havriliak-Negami relationships. Post deposition annealing in nitrogen at 900 °C for 15 min improved dielectric relaxation and reduced the dielectric loss.

AB - Thin films of La2 Hf2 O7 have been deposited by liquid injection atomic layer deposition and post-deposition annealed at 900 °C. The dielectric frequency dispersion was more serious for thinner films which is attributed to the effect of a lossy interfacial layer between the La2 Hf2 O7 dielectric and silicon substrate. The effect of the interfacial layer was modeled based on a dual-frequency measurement technique. The dielectric relaxation of the La2 Hf2 O7 thin films was modelled using both the Curie-von Schweidler and Havriliak-Negami relationships. Post deposition annealing in nitrogen at 900 °C for 15 min improved dielectric relaxation and reduced the dielectric loss.

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Frequency dispersion and dielectric relaxation of La2 Hf2 O7

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