TY - GEN
T1 - Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors
AU - Zhao, Tianshi
AU - Zhao, Chun
AU - Mitrovic, Ivona Z.
AU - Gee Lim, Eng
AU - Yang, Li
AU - Qiu, Chenghu
AU - Zhao, Ce Zhou
N1 - Funding Information:
ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07, KSF-T-03).
Publisher Copyright:
© 2020 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - In this work, solution processed zinc tin oxide semiconductor films were investigated. Different from the widely reported high-temperature and toxic organic solvent-based fabrication process, a low temperature and eco-friendly aqueous solvent-based route was studied. The optimization of electrical performances on field effect mobility and reliability was proved. Moreover, a resistor-loaded inverter was constructed.
AB - In this work, solution processed zinc tin oxide semiconductor films were investigated. Different from the widely reported high-temperature and toxic organic solvent-based fabrication process, a low temperature and eco-friendly aqueous solvent-based route was studied. The optimization of electrical performances on field effect mobility and reliability was proved. Moreover, a resistor-loaded inverter was constructed.
KW - Current-voltage characteristics
KW - Inverters
KW - Semiconductor devices
KW - Thin film transistors
KW - Threshold voltage
UR - http://www.scopus.com/inward/record.url?scp=85088383768&partnerID=8YFLogxK
U2 - 10.1109/IRPS45951.2020.9128329
DO - 10.1109/IRPS45951.2020.9128329
M3 - Conference Proceeding
AN - SCOPUS:85088383768
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020
Y2 - 28 April 2020 through 30 May 2020
ER -