TY - GEN
T1 - Evaluation of the partially-depleted silicon-on-sapphire technology for microwave amplifiers and other prospective applications
AU - Lam, Sang
AU - Ki, Wing Hung
AU - Shen, Chao
AU - Ko, P. K.
AU - Chan, Mansun
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - The gigahertz microwave performances of simple floating-body MOSFET on a 0.5-μm partially-depleted (PD) silicon-on-sapphire (SOS) CMOS technology is reported. The microwave small-signal gain increases with VDS despite the DC kink resulted from the floating body of the PD-SOS MOSFET. However, minimum value of Fmin is obtained with low VDS in saturation region. In large-signal amplification, a class B operation of the PD-SOS nMOSFET gives an almost 40% peak power-added efficiency (PAE) and a maximum output power of more than 32 mW/mm using 3 V power supply regardless of the apparent lower drain-source breakdown voltage (BVDS). Based on the measurement results, the PD-SOS technology is evaluated for implementations of microwave amplifiers: low-noise amplifier and power amplifier. The underlying device physics and. brief circuit design guidelines are given. Prospective applications of SOS CMOS technology in microwave photonics are also discussed.
AB - The gigahertz microwave performances of simple floating-body MOSFET on a 0.5-μm partially-depleted (PD) silicon-on-sapphire (SOS) CMOS technology is reported. The microwave small-signal gain increases with VDS despite the DC kink resulted from the floating body of the PD-SOS MOSFET. However, minimum value of Fmin is obtained with low VDS in saturation region. In large-signal amplification, a class B operation of the PD-SOS nMOSFET gives an almost 40% peak power-added efficiency (PAE) and a maximum output power of more than 32 mW/mm using 3 V power supply regardless of the apparent lower drain-source breakdown voltage (BVDS). Based on the measurement results, the PD-SOS technology is evaluated for implementations of microwave amplifiers: low-noise amplifier and power amplifier. The underlying device physics and. brief circuit design guidelines are given. Prospective applications of SOS CMOS technology in microwave photonics are also discussed.
UR - http://www.scopus.com/inward/record.url?scp=84966692058&partnerID=8YFLogxK
U2 - 10.1109/ICMMT.2002.1187662
DO - 10.1109/ICMMT.2002.1187662
M3 - Conference Proceeding
AN - SCOPUS:84966692058
T3 - ICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology
SP - 171
EP - 174
BT - ICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT 2002
Y2 - 17 August 2002 through 19 August 2002
ER -