Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide

Y. X. Fang; T. S. Zhao; C. Zhao; C. Z. Zhao; I. Z. Mitrovic; L. Yang

doi:10.1109/ICICDT.2019.8790870

Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide

Y. X. Fang, T. S. Zhao, C. Zhao^*, C. Z. Zhao^*, I. Z. Mitrovic, L. Yang

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

2 Citations (Scopus)

Abstract

In this work, the effect of hydrogen peroxide (HO) on the biased radiation stress (BRS) and biased illumination stress (BIS) stability of solution-processed AlOx thin films were investigated. It is found that the BRS and BIS stabilities, as well as the leakage behavior were significantly improved through employing HO in the solution-process. Through the TGA-DSC analysis of the precursor powder with and without the presence of HO, we assumed that HO effectively reduced the oxygen vacancy defect density by strong oxidation and minimizes defects by eliminating the impurities at lower temperatures compared to a conventional solution process.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790870
Publication status	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

aluminum oxide
biased illumination stress (BIS)
biased radiation stress (BRS)
hydrogen peroxide
solution-process
stability (key words)

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10.1109/ICICDT.2019.8790870

Cite this

Fang, Y. X., Zhao, T. S., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., & Yang, L. (2019). Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790870 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790870

Fang, Y. X. ; Zhao, T. S. ; Zhao, C. et al. / Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

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title = "Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide",

abstract = "In this work, the effect of hydrogen peroxide (HO) on the biased radiation stress (BRS) and biased illumination stress (BIS) stability of solution-processed AlOx thin films were investigated. It is found that the BRS and BIS stabilities, as well as the leakage behavior were significantly improved through employing HO in the solution-process. Through the TGA-DSC analysis of the precursor powder with and without the presence of HO, we assumed that HO effectively reduced the oxygen vacancy defect density by strong oxidation and minimizes defects by eliminating the impurities at lower temperatures compared to a conventional solution process.",

keywords = "aluminum oxide, biased illumination stress (BIS), biased radiation stress (BRS), hydrogen peroxide, solution-process, stability (key words)",

author = "Fang, {Y. X.} and Zhao, {T. S.} and C. Zhao and Zhao, {C. Z.} and Mitrovic, {I. Z.} and L. Yang",

note = "Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790870",

language = "English",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

}

Fang, YX, Zhao, TS, Zhao, C, Zhao, CZ, Mitrovic, IZ & Yang, L 2019, Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790870, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790870

Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide. / Fang, Y. X.; Zhao, T. S.; Zhao, C. et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790870 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide

AU - Fang, Y. X.

AU - Zhao, T. S.

AU - Zhao, C.

AU - Zhao, C. Z.

AU - Mitrovic, I. Z.

AU - Yang, L.

N1 - Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: © 2019 IEEE.

PY - 2019/6

Y1 - 2019/6

N2 - In this work, the effect of hydrogen peroxide (HO) on the biased radiation stress (BRS) and biased illumination stress (BIS) stability of solution-processed AlOx thin films were investigated. It is found that the BRS and BIS stabilities, as well as the leakage behavior were significantly improved through employing HO in the solution-process. Through the TGA-DSC analysis of the precursor powder with and without the presence of HO, we assumed that HO effectively reduced the oxygen vacancy defect density by strong oxidation and minimizes defects by eliminating the impurities at lower temperatures compared to a conventional solution process.

AB - In this work, the effect of hydrogen peroxide (HO) on the biased radiation stress (BRS) and biased illumination stress (BIS) stability of solution-processed AlOx thin films were investigated. It is found that the BRS and BIS stabilities, as well as the leakage behavior were significantly improved through employing HO in the solution-process. Through the TGA-DSC analysis of the precursor powder with and without the presence of HO, we assumed that HO effectively reduced the oxygen vacancy defect density by strong oxidation and minimizes defects by eliminating the impurities at lower temperatures compared to a conventional solution process.

KW - aluminum oxide

KW - biased illumination stress (BIS)

KW - biased radiation stress (BRS)

KW - hydrogen peroxide

KW - solution-process

KW - stability (key words)

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T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019

Y2 - 17 June 2019 through 19 June 2019

ER -

Fang YX, Zhao TS, Zhao C, Zhao CZ, Mitrovic IZ, Yang L. Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790870. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790870

Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide

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