TY - GEN
T1 - Electrical Characteristics Analysis of AlGaN/GaN FinFET and TSEP Junction Temperature Test of GaN Devices
AU - Zhang, Yichi
AU - Wen, Huiqing
AU - Qu, Zifeng
AU - Liu, Tianran
AU - Jiang, Yizhou
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - The third generation semiconductors with wide band-gap (WBG) mainly composed of SiC and GaN have excellent switching characteristics and are very popular in the market. With the chip size shrinking, the channel of the device is getting shorter and shorter, which is easy to cause short channel effect. Breaking through the channel length barrier has become the research focus; With the chip size shrinking, the volume of active region is getting smaller and smaller, and the influence of temperature on the reliability of devices is increasing, so the measurement of temperature rise and thermal resistance becomes an important work. The main research contents of this paper are as follows: (1) Using Silvaco TCAD software, 3D modeling of FinFET and the other two devices is carried out, and the electrical characteristics of the three devices are obtained and compared. Then, the transfer characteristics and transconductance characteristics of different Fin widths and Fin heights are tested, and the characteristic curves are obtained and analyzed; (2) Through TSEP method, the boost converter circuit is built with LTspice software to deduce the variation of junction temperature and shell temperature, and the junction temperature and other electrical characteristics are analyzed when the driving resistance is different.
AB - The third generation semiconductors with wide band-gap (WBG) mainly composed of SiC and GaN have excellent switching characteristics and are very popular in the market. With the chip size shrinking, the channel of the device is getting shorter and shorter, which is easy to cause short channel effect. Breaking through the channel length barrier has become the research focus; With the chip size shrinking, the volume of active region is getting smaller and smaller, and the influence of temperature on the reliability of devices is increasing, so the measurement of temperature rise and thermal resistance becomes an important work. The main research contents of this paper are as follows: (1) Using Silvaco TCAD software, 3D modeling of FinFET and the other two devices is carried out, and the electrical characteristics of the three devices are obtained and compared. Then, the transfer characteristics and transconductance characteristics of different Fin widths and Fin heights are tested, and the characteristic curves are obtained and analyzed; (2) Through TSEP method, the boost converter circuit is built with LTspice software to deduce the variation of junction temperature and shell temperature, and the junction temperature and other electrical characteristics are analyzed when the driving resistance is different.
KW - GaN FinFET
KW - Junction temperature
KW - short channel effect
KW - Silvaco TCAD
KW - TSEP
UR - http://www.scopus.com/inward/record.url?scp=85184668653&partnerID=8YFLogxK
U2 - 10.1109/SSLChinaIFWS60785.2023.10399757
DO - 10.1109/SSLChinaIFWS60785.2023.10399757
M3 - Conference Proceeding
AN - SCOPUS:85184668653
T3 - 2023 20th China International Forum on Solid State Lighting and 2023 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
SP - 226
EP - 229
BT - 2023 20th China International Forum on Solid State Lighting and 2023 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
Y2 - 27 November 2023 through 30 November 2023
ER -