TY - JOUR
T1 - Effects of spacer thickness on noise performance of bipolar transistors
AU - Lee, Wai Kit
AU - Lam, Sang
AU - Chan, Mansun
PY - 2004/9/1
Y1 - 2004/9/1
N2 - The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NFmin) derived from the Y-parameters as well as the base (rB) and emitter resistance (rE) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (Rn), optimum source admittance (Ysop), and the associated gain (GA,assc) are also given in this brief. To achieve the minimum value of NFmin, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.
AB - The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NFmin) derived from the Y-parameters as well as the base (rB) and emitter resistance (rE) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (Rn), optimum source admittance (Ysop), and the associated gain (GA,assc) are also given in this brief. To achieve the minimum value of NFmin, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.
UR - http://www.scopus.com/inward/record.url?scp=4444361529&partnerID=8YFLogxK
U2 - 10.1109/TED.2004.833959
DO - 10.1109/TED.2004.833959
M3 - Article
AN - SCOPUS:4444361529
SN - 0018-9383
VL - 51
SP - 1534
EP - 1537
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
ER -