Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

Way Foong Lim; Hock Jin Quah; Qifeng Lu; Yifei Mu; Wan Azli Wan Ismail; Bazura Abdul Rahim; Siti Rahmah Esa; Yeh Yee Kee; Ce Zhou Zhao; Zainuriah Hassan; Kuan Yew Cheong

doi:10.1016/j.apsusc.2016.01.037

Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

Way Foong Lim, Hock Jin Quah, Qifeng Lu, Yifei Mu, Wan Azli Wan Ismail, Bazura Abdul Rahim, Siti Rahmah Esa, Yeh Yee Kee, Ce Zhou Zhao, Zainuriah Hassan, Kuan Yew Cheong^*

^*Corresponding author for this work

School of Advanced Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Effects of rapid thermal annealing at different temperatures (700-900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO ₂ ) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO ₂ lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zr-O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current-time (I-t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO ₂ signified the potential of the doped ZrO ₂ as a metal reactive oxide on 4H-SiC substrate.

Original language	English
Pages (from-to)	296-305
Number of pages	10
Journal	Applied Surface Science
Volume	365
DOIs	https://doi.org/10.1016/j.apsusc.2016.01.037
Publication status	Published - 1 Mar 2016

Keywords

Atomic layer deposition
Lanthanum doped zirconium oxide
Rapid thermal annealing
Time-of-flight secondary ion mass spectrometry
X-ray photoelectron spectroscopy

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Lim, W. F., Quah, H. J., Lu, Q., Mu, Y., Ismail, W. A. W., Rahim, B. A., Esa, S. R., Kee, Y. Y., Zhao, C. Z., Hassan, Z., & Cheong, K. Y. (2016). Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate. Applied Surface Science, 365, 296-305. https://doi.org/10.1016/j.apsusc.2016.01.037

@article{a2796b96ebe14fd1821aaeb4b7875e45,

title = "Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate",

abstract = " Effects of rapid thermal annealing at different temperatures (700-900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO 2 ) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO 2 lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zr-O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current-time (I-t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO 2 signified the potential of the doped ZrO 2 as a metal reactive oxide on 4H-SiC substrate.",

keywords = "Atomic layer deposition, Lanthanum doped zirconium oxide, Rapid thermal annealing, Time-of-flight secondary ion mass spectrometry, X-ray photoelectron spectroscopy",

author = "Lim, {Way Foong} and Quah, {Hock Jin} and Qifeng Lu and Yifei Mu and Ismail, {Wan Azli Wan} and Rahim, {Bazura Abdul} and Esa, {Siti Rahmah} and Kee, {Yeh Yee} and Zhao, {Ce Zhou} and Zainuriah Hassan and Cheong, {Kuan Yew}",

year = "2016",

month = mar,

day = "1",

doi = "10.1016/j.apsusc.2016.01.037",

language = "English",

volume = "365",

pages = "296--305",

journal = "Applied Surface Science",

issn = "0169-4332",

}

Lim, WF, Quah, HJ, Lu, Q, Mu, Y, Ismail, WAW, Rahim, BA, Esa, SR, Kee, YY, Zhao, CZ, Hassan, Z & Cheong, KY 2016, 'Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate', Applied Surface Science, vol. 365, pp. 296-305. https://doi.org/10.1016/j.apsusc.2016.01.037

TY - JOUR

T1 - Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

AU - Lim, Way Foong

AU - Quah, Hock Jin

AU - Lu, Qifeng

AU - Mu, Yifei

AU - Ismail, Wan Azli Wan

AU - Rahim, Bazura Abdul

AU - Esa, Siti Rahmah

AU - Kee, Yeh Yee

AU - Zhao, Ce Zhou

AU - Hassan, Zainuriah

AU - Cheong, Kuan Yew

PY - 2016/3/1

Y1 - 2016/3/1

N2 - Effects of rapid thermal annealing at different temperatures (700-900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO 2 ) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO 2 lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zr-O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current-time (I-t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO 2 signified the potential of the doped ZrO 2 as a metal reactive oxide on 4H-SiC substrate.

AB - Effects of rapid thermal annealing at different temperatures (700-900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO 2 ) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO 2 lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zr-O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current-time (I-t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO 2 signified the potential of the doped ZrO 2 as a metal reactive oxide on 4H-SiC substrate.

KW - Atomic layer deposition

KW - Lanthanum doped zirconium oxide

KW - Rapid thermal annealing

KW - Time-of-flight secondary ion mass spectrometry

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84959545877&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2016.01.037

DO - 10.1016/j.apsusc.2016.01.037

M3 - Article

AN - SCOPUS:84959545877

SN - 0169-4332

VL - 365

SP - 296

EP - 305

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

Abstract

Keywords

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