Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

C. C. Zheng; J. Q. Ning; Z. P. Wu; J. F. Wang; D. G. Zhao; K. Xu; J. Gao; S. J. Xu

doi:10.1039/c4ra12218f

Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

C. C. Zheng, J. Q. Ning, Z. P. Wu, J. F. Wang, D. G. Zhao, K. Xu, J. Gao, S. J. Xu^*

^*Corresponding author for this work

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The effects of Fe doping on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates were investigated in detail by confocal micro-Raman spectroscopy under the back-scattering geometric configuration. Careful investigation of the Ehigh2 and A₁(LO) modes of the Fe- and Si-doped epilayers as well as the intentionally undoped free-standing GaN reveals that the compressive residual strain in the Fe-doped GaN epilayers tends to relax as the Fe concentration increases. This finding is further supported by X-ray diffraction measurements. The relaxation of compressive residual strain is most likely due to compensation by the tensile strain induced by incorporation of iron atoms in the GaN epilayers. The influence of Fe doping on the background electron concentration was also discussed by analyzing the upper branch of the A₁(LO)-plasmon coupled mode.

Original language	English
Pages (from-to)	55430-55434
Number of pages	5
Journal	RSC Advances
Volume	4
Issue number	98
DOIs	https://doi.org/10.1039/c4ra12218f
Publication status	Published - 2014

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title = "Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates",

abstract = "The effects of Fe doping on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates were investigated in detail by confocal micro-Raman spectroscopy under the back-scattering geometric configuration. Careful investigation of the Ehigh2 and A1(LO) modes of the Fe- and Si-doped epilayers as well as the intentionally undoped free-standing GaN reveals that the compressive residual strain in the Fe-doped GaN epilayers tends to relax as the Fe concentration increases. This finding is further supported by X-ray diffraction measurements. The relaxation of compressive residual strain is most likely due to compensation by the tensile strain induced by incorporation of iron atoms in the GaN epilayers. The influence of Fe doping on the background electron concentration was also discussed by analyzing the upper branch of the A1(LO)-plasmon coupled mode.",

author = "Zheng, {C. C.} and Ning, {J. Q.} and Wu, {Z. P.} and Wang, {J. F.} and Zhao, {D. G.} and K. Xu and J. Gao and Xu, {S. J.}",

note = "Publisher Copyright: {\textcopyright} 2014 The Royal Society of Chemistry.",

year = "2014",

doi = "10.1039/c4ra12218f",

language = "English",

volume = "4",

pages = "55430--55434",

journal = "RSC Advances",

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TY - JOUR

T1 - Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

AU - Zheng, C. C.

AU - Ning, J. Q.

AU - Wu, Z. P.

AU - Wang, J. F.

AU - Zhao, D. G.

AU - Xu, K.

AU - Gao, J.

AU - Xu, S. J.

PY - 2014

Y1 - 2014

N2 - The effects of Fe doping on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates were investigated in detail by confocal micro-Raman spectroscopy under the back-scattering geometric configuration. Careful investigation of the Ehigh2 and A1(LO) modes of the Fe- and Si-doped epilayers as well as the intentionally undoped free-standing GaN reveals that the compressive residual strain in the Fe-doped GaN epilayers tends to relax as the Fe concentration increases. This finding is further supported by X-ray diffraction measurements. The relaxation of compressive residual strain is most likely due to compensation by the tensile strain induced by incorporation of iron atoms in the GaN epilayers. The influence of Fe doping on the background electron concentration was also discussed by analyzing the upper branch of the A1(LO)-plasmon coupled mode.

AB - The effects of Fe doping on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates were investigated in detail by confocal micro-Raman spectroscopy under the back-scattering geometric configuration. Careful investigation of the Ehigh2 and A1(LO) modes of the Fe- and Si-doped epilayers as well as the intentionally undoped free-standing GaN reveals that the compressive residual strain in the Fe-doped GaN epilayers tends to relax as the Fe concentration increases. This finding is further supported by X-ray diffraction measurements. The relaxation of compressive residual strain is most likely due to compensation by the tensile strain induced by incorporation of iron atoms in the GaN epilayers. The influence of Fe doping on the background electron concentration was also discussed by analyzing the upper branch of the A1(LO)-plasmon coupled mode.

UR - http://www.scopus.com/inward/record.url?scp=84908587126&partnerID=8YFLogxK

U2 - 10.1039/c4ra12218f

DO - 10.1039/c4ra12218f

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SN - 2046-2069

VL - 4

SP - 55430

EP - 55434

JO - RSC Advances

JF - RSC Advances

IS - 98

ER -

Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

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