Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In3SbTe2

Minho Choi; Heechae Choi; Seungchul Kim; Jinho Ahn; Yong Tae Kim

doi:10.3938/jkps.71.946

Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In₃SbTe₂

Minho Choi, Heechae Choi, Seungchul Kim, Jinho Ahn^*, Yong Tae Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy (V³⁻ _In) and higher concentration of the V³⁻ _In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V³⁻ _In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.

Original language	English
Pages (from-to)	946-949
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	71
Issue number	12
DOIs	https://doi.org/10.3938/jkps.71.946
Publication status	Published - 1 Dec 2017
Externally published	Yes

Keywords

Distortion
Phase change material
Phase change memory
Vacancy

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title = "Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In3SbTe2 ",

abstract = "Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy (V3− In) and higher concentration of the V3− In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V3− In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.",

keywords = "Distortion, Phase change material, Phase change memory, Vacancy",

author = "Minho Choi and Heechae Choi and Seungchul Kim and Jinho Ahn and Kim, {Yong Tae}",

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T1 - Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In3SbTe2

AU - Choi, Minho

AU - Choi, Heechae

AU - Kim, Seungchul

AU - Ahn, Jinho

AU - Kim, Yong Tae

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy (V3− In) and higher concentration of the V3− In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V3− In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.

AB - Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy (V3− In) and higher concentration of the V3− In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V3− In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.

KW - Distortion

KW - Phase change material

KW - Phase change memory

KW - Vacancy

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

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ER -

Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In₃SbTe₂

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Keywords

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