TY - GEN
T1 - Effect of pulse repetition rate on silicon wafer modification by four-beam laser interference
AU - Zhao, L.
AU - Wang, Z.
AU - Li, W.
AU - Yu, M.
AU - Zhang, Z.
AU - Xu, J.
AU - Yu, Y.
AU - Weng, Z.
AU - Li, S.
AU - Maple, C.
AU - Li, D.
AU - Yue, Y.
PY - 2013
Y1 - 2013
N2 - This paper discusses the effect of pulse repetition rates on silicon wafer modification by four-beam laser interference. In the work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of dots, and different laser pulse repetition rates were applied to the process in the air. The results were obtained from 10 laser exposure pulses with the single laser fluence of 283mJ/cm2, the pulse repetition rates were 1Hz, 5Hz and 10Hz, the laser wavelength was 1064nm and the pulse duration 7-9ns. The results have been observed using a scanning electron microscope (SEM) and optical microscope. They indicate that the laser pulse repetition rate has to be properly selected for the fabrication of the structures of dots using four-beam laser interference.
AB - This paper discusses the effect of pulse repetition rates on silicon wafer modification by four-beam laser interference. In the work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of dots, and different laser pulse repetition rates were applied to the process in the air. The results were obtained from 10 laser exposure pulses with the single laser fluence of 283mJ/cm2, the pulse repetition rates were 1Hz, 5Hz and 10Hz, the laser wavelength was 1064nm and the pulse duration 7-9ns. The results have been observed using a scanning electron microscope (SEM) and optical microscope. They indicate that the laser pulse repetition rate has to be properly selected for the fabrication of the structures of dots using four-beam laser interference.
KW - laser interference
KW - lithography
KW - pulse repetition rate
KW - silicon wafer modification
UR - http://www.scopus.com/inward/record.url?scp=84896797712&partnerID=8YFLogxK
U2 - 10.1109/3M-NANO.2013.6737385
DO - 10.1109/3M-NANO.2013.6737385
M3 - Conference Proceeding
AN - SCOPUS:84896797712
SN - 9781479912131
T3 - 2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2013 - Conference Proceedings
SP - 104
EP - 107
BT - 2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2013 - Conference Proceedings
PB - IEEE Computer Society
T2 - 2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2013
Y2 - 26 August 2013 through 30 August 2013
ER -