TY - GEN
T1 - Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices
AU - Cai, Yutao
AU - Wang, Yang
AU - Cui, Miao
AU - Liu, Wen
AU - Wen, Huiqing
AU - Zhao, Cezhou
AU - Mitrovic, Ivona Z.
AU - Taylor, Stephen
AU - Chalker, Paul R.
N1 - Funding Information:
This work was supported by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(18KJB470023) ， Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), the Key Program Special Fund in XJTLU (KSF-A-05) (KSF-A-12), and the XJTLU Research Development Fund (PGRS-13-03-01 and RDF-14-02-02). The authors IZM and PRC acknowledge UKRI GAA award as well as British Council UKIERI project no. IND/CONT/G/17-18/18.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - In this paper, a 2-D simulation of breakdown characteristics of GaN-based Metal Insulator Semiconductor High Electron Mobility Transistors with a high permittivity passivation layer was performed. As a result, it is found that the breakdown voltage is enhanced with permittivity of the passivation layer due to reduction of the electric field at the drain edge of gate. In addition, the GaN-based MIS-HEMTs with three different passivation (Si3N4 passivation, Al/SiNx stack passivation and ZrO/SiNx stack passivation) were fabricated and compared. The breakdown voltage of the MIS-HEMTs passivated with ZrO/SiNx stack is 483 V, which is 22% higher than for the MIS-HEMTs with Si3N4 passivation. Moreover, the devices passivated with SiNx or bilayer Al/SiNx show significant current collapse (33% and 8%, respectively), while the bilayer ZrO/SiNx passivated devices exhibit negligible current collapse of 1%.
AB - In this paper, a 2-D simulation of breakdown characteristics of GaN-based Metal Insulator Semiconductor High Electron Mobility Transistors with a high permittivity passivation layer was performed. As a result, it is found that the breakdown voltage is enhanced with permittivity of the passivation layer due to reduction of the electric field at the drain edge of gate. In addition, the GaN-based MIS-HEMTs with three different passivation (Si3N4 passivation, Al/SiNx stack passivation and ZrO/SiNx stack passivation) were fabricated and compared. The breakdown voltage of the MIS-HEMTs passivated with ZrO/SiNx stack is 483 V, which is 22% higher than for the MIS-HEMTs with Si3N4 passivation. Moreover, the devices passivated with SiNx or bilayer Al/SiNx show significant current collapse (33% and 8%, respectively), while the bilayer ZrO/SiNx passivated devices exhibit negligible current collapse of 1%.
KW - Al O
KW - GaN
KW - Metal Insulator Semiconductor (MIS)
KW - ZrO
KW - high electron mobility transistors (HEMTs)
KW - high-k
KW - plasma enhanced chemical vapor deposition (PECVD) Si N 4
UR - http://www.scopus.com/inward/record.url?scp=85071451726&partnerID=8YFLogxK
U2 - 10.1109/ICICDT.2019.8790844
DO - 10.1109/ICICDT.2019.8790844
M3 - Conference Proceeding
AN - SCOPUS:85071451726
T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Y2 - 17 June 2019 through 19 June 2019
ER -