Effect of annealing temperature for Ni/AlOx/Pt RRAM devices fabricated with solution-based dielectric

Zongjie Shen; Yanfei Qi; Ivona Z. Mitrovic; Cezhou Zhao; Steve Hall; Li Yang; Tian Luo; Yanbo Huang; Chun Zhao

doi:10.3390/mi10070446

Effect of annealing temperature for Ni/AlO_x/Pt RRAM devices fabricated with solution-based dielectric

Zongjie Shen, Yanfei Qi, Ivona Z. Mitrovic, Cezhou Zhao^*, Steve Hall, Li Yang, Tian Luo, Yanbo Huang, Chun Zhao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Resistive random access memory (RRAM) devices with Ni/AlO_x/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO_x) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (< 1.5 V), the highest ON/OFF ratio (> 10⁴), the narrowest resistance distribution, the longest retention time (> 10⁴ s) and the most endurance cycles (> 150).

Original language	English
Article number	446
Journal	Micromachines
Volume	10
Issue number	7
DOIs	https://doi.org/10.3390/mi10070446
Publication status	Published - 1 Jul 2019

Keywords

Annealing temperatures
Bipolar resistive switching characteristics
Resistive random access memory (RRAM)
Solution-based dielectric

Access to Document

10.3390/mi10070446

Cite this

@article{ccd053b4aa3441a4b8a7ba7e3ebd03a0,

title = "Effect of annealing temperature for Ni/AlOx/Pt RRAM devices fabricated with solution-based dielectric",

abstract = "Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (< 1.5 V), the highest ON/OFF ratio (> 104), the narrowest resistance distribution, the longest retention time (> 104 s) and the most endurance cycles (> 150).",

keywords = "Annealing temperatures, Bipolar resistive switching characteristics, Resistive random access memory (RRAM), Solution-based dielectric",

author = "Zongjie Shen and Yanfei Qi and Mitrovic, {Ivona Z.} and Cezhou Zhao and Steve Hall and Li Yang and Tian Luo and Yanbo Huang and Chun Zhao",

note = "Funding Information: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A-07). The author Ivona Z. Mitrovic acknowledges the British Council UKIERI project no. IND/CONT/G/17-18/18. Funding Information: Funding: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A-07). The author Ivona Z. Mitrovic acknowledges the British Council UKIERI project no. IND/CONT/G/17-18/18. Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = jul,

day = "1",

doi = "10.3390/mi10070446",

language = "English",

volume = "10",

journal = "Micromachines",

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T1 - Effect of annealing temperature for Ni/AlOx/Pt RRAM devices fabricated with solution-based dielectric

AU - Shen, Zongjie

AU - Qi, Yanfei

AU - Mitrovic, Ivona Z.

AU - Zhao, Cezhou

AU - Hall, Steve

AU - Yang, Li

AU - Luo, Tian

AU - Huang, Yanbo

AU - Zhao, Chun

N1 - Funding Information: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A-07). The author Ivona Z. Mitrovic acknowledges the British Council UKIERI project no. IND/CONT/G/17-18/18. Funding Information: Funding: This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441,61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A-07). The author Ivona Z. Mitrovic acknowledges the British Council UKIERI project no. IND/CONT/G/17-18/18. Publisher Copyright: © 2019 by the authors.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (< 1.5 V), the highest ON/OFF ratio (> 104), the narrowest resistance distribution, the longest retention time (> 104 s) and the most endurance cycles (> 150).

AB - Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (< 1.5 V), the highest ON/OFF ratio (> 104), the narrowest resistance distribution, the longest retention time (> 104 s) and the most endurance cycles (> 150).

KW - Annealing temperatures

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