@inproceedings{1a52488e8c334452b2a2cede2b3523be,
title = "Eco-Friendly, Low-temperature Solution-processed InO/A1oThin-film Transistor with Li-incorporation",
abstract = "In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm2·V-1·s-1 from 30 samples, which is a promising result for future applications.",
keywords = "InO, Li incorporation, TFT, component, solution process",
author = "Zhao, {T. S.} and C. Zhao and Zhao, {C. Z.} and Xu, {W. Y.} and L. Yang and Mitrovic, {I. Z.} and S. Hall and Lim, {E. G.} and Yu, {S. C.}",
note = "Funding Information: ACKNOWLEDGMENT This research was funded in part by the National Natural Science Foundation of China (21503169, 2175011441, 61704111), Key Program Special Fund in XJTLU (KSF-P-02, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 ; Conference date: 01-04-2019 Through 03-04-2019",
year = "2019",
month = apr,
doi = "10.1109/EUROSOI-ULIS45800.2019.9041879",
language = "English",
series = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",
}