Dynamic RON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

Ye Liang; Xiuyuan He; Xi Feng; Yuanlei Zhang; Jie Zhang; Wen Liu

doi:10.1002/pssa.202300976

Dynamic R_ON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

Ye Liang, Xiuyuan He, Xi Feng, Yuanlei Zhang, Jie Zhang^*, Wen Liu^*

^*Corresponding author for this work

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This study investigates the impact of gate field plate (G-FP) lengths on the dynamic on-resistance degradation in partially recessed-gate D-mode GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices with G-FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G-FPs effectively reduce electron trapping and suppress the dynamic on-resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN-based MIS-HEMTs.

Original language	English
Article number	2300976
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	221
Issue number	21
DOIs	https://doi.org/10.1002/pssa.202300976
Publication status	Published - Nov 2024

Keywords

AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors
dynamic on-resistances
field plates

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10.1002/pssa.202300976

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Liang, Y., He, X., Feng, X., Zhang, Y., Zhang, J., & Liu, W. (2024). Dynamic R_ON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors. Physica Status Solidi (A) Applications and Materials Science, 221(21), Article 2300976. https://doi.org/10.1002/pssa.202300976

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abstract = "This study investigates the impact of gate field plate (G-FP) lengths on the dynamic on-resistance degradation in partially recessed-gate D-mode GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices with G-FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G-FPs effectively reduce electron trapping and suppress the dynamic on-resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN-based MIS-HEMTs.",

keywords = "AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors, dynamic on-resistances, field plates",

author = "Ye Liang and Xiuyuan He and Xi Feng and Yuanlei Zhang and Jie Zhang and Wen Liu",

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AU - Feng, Xi

AU - Zhang, Yuanlei

AU - Zhang, Jie

AU - Liu, Wen

PY - 2024/11

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N2 - This study investigates the impact of gate field plate (G-FP) lengths on the dynamic on-resistance degradation in partially recessed-gate D-mode GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices with G-FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G-FPs effectively reduce electron trapping and suppress the dynamic on-resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN-based MIS-HEMTs.

AB - This study investigates the impact of gate field plate (G-FP) lengths on the dynamic on-resistance degradation in partially recessed-gate D-mode GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices with G-FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G-FPs effectively reduce electron trapping and suppress the dynamic on-resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN-based MIS-HEMTs.

KW - AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors

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Dynamic R_ON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

Abstract

Keywords

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