Dielectric relaxation of lanthanide-based ternary oxides

Ce Zhou Zhao; J. Tao; Chun Zhao; M. Werner; S. Taylor; P. R. Chalker

doi:10.1109/ICSICT.2012.6467814

Dielectric relaxation of lanthanide-based ternary oxides

Ce Zhou Zhao^*, J. Tao, Chun Zhao, M. Werner, S. Taylor, P. R. Chalker

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

Frequency dispersion in lanthanide-based ternary oxides is often observed in capacitance-voltage (C-V) measurements. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion (dielectric relaxation), could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the lanthanide-based ternary oxide and silicon substrate) and the parasitic effects. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467814
Publication status	Published - 2012
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Publication series

Name	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 1/11/12

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10.1109/ICSICT.2012.6467814

Cite this

Zhao, C. Z., Tao, J., Zhao, C., Werner, M., Taylor, S., & Chalker, P. R. (2012). Dielectric relaxation of lanthanide-based ternary oxides. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467814 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467814

@inproceedings{bb5bccf6f6db449d977910d7f10e8b24,

title = "Dielectric relaxation of lanthanide-based ternary oxides",

abstract = "Frequency dispersion in lanthanide-based ternary oxides is often observed in capacitance-voltage (C-V) measurements. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion (dielectric relaxation), could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the lanthanide-based ternary oxide and silicon substrate) and the parasitic effects. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed.",

author = "Zhao, {Ce Zhou} and J. Tao and Chun Zhao and M. Werner and S. Taylor and Chalker, {P. R.}",

year = "2012",

doi = "10.1109/ICSICT.2012.6467814",

language = "English",

isbn = "9781467324724",

series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Zhao, CZ, Tao, J, Zhao, C, Werner, M, Taylor, S & Chalker, PR 2012, Dielectric relaxation of lanthanide-based ternary oxides. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467814, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467814

Dielectric relaxation of lanthanide-based ternary oxides. / Zhao, Ce Zhou; Tao, J.; Zhao, Chun et al.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467814 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Dielectric relaxation of lanthanide-based ternary oxides

AU - Zhao, Ce Zhou

AU - Tao, J.

AU - Zhao, Chun

AU - Werner, M.

AU - Taylor, S.

AU - Chalker, P. R.

PY - 2012

Y1 - 2012

N2 - Frequency dispersion in lanthanide-based ternary oxides is often observed in capacitance-voltage (C-V) measurements. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion (dielectric relaxation), could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the lanthanide-based ternary oxide and silicon substrate) and the parasitic effects. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed.

AB - Frequency dispersion in lanthanide-based ternary oxides is often observed in capacitance-voltage (C-V) measurements. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion (dielectric relaxation), could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the lanthanide-based ternary oxide and silicon substrate) and the parasitic effects. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed.

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U2 - 10.1109/ICSICT.2012.6467814

DO - 10.1109/ICSICT.2012.6467814

M3 - Conference Proceeding

AN - SCOPUS:84874914381

SN - 9781467324724

T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

Y2 - 29 October 2012 through 1 November 2012

ER -

Zhao CZ, Tao J, Zhao C, Werner M, Taylor S, Chalker PR. Dielectric relaxation of lanthanide-based ternary oxides. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467814. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2012.6467814

Dielectric relaxation of lanthanide-based ternary oxides

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