TY - JOUR
T1 - Dielectric relaxation of high-k oxides
AU - Zhao, Chun
AU - Zhao, Ce Zhou
AU - Werner, Matthew
AU - Taylor, Steve
AU - Chalker, Paul
N1 - Funding Information:
This research was funded in part by the Engineering and Physical Science Research Council of UK under the grant EP/D068606/1, the National Natural and Science Foundation of China under the grant no. 60976075 and 11375146, the Suzhou Science and Technology Bureau of China under the grant SYG201007 and SYG201223, and the Jiangsu Provincial Science and Technology Supporting Program under the grant BK2012636.
PY - 2013
Y1 - 2013
N2 - Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.
AB - Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.
KW - Dielectric relaxation
KW - Frequency dispersion
KW - Grain size
KW - High-k
UR - http://www.scopus.com/inward/record.url?scp=84887308699&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-8-456
DO - 10.1186/1556-276X-8-456
M3 - Article
AN - SCOPUS:84887308699
SN - 1931-7573
VL - 8
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 456
ER -