TY - GEN
T1 - Dielectric relaxation model in high-k materials
T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
AU - Wang, Peng Fei
AU - Zhao, Chun
AU - Zhao, Ce Zhou
AU - Liu, Gang
PY - 2012
Y1 - 2012
N2 - The dielectric relaxation in the high-k materials, which would cause the metal-oxide-semiconductor field-effect transistor deterioration, is able to be fitted by several models. A novel model is proposed to simplify the original Kohlrausch-Williams-Watts (KWW) model. The proposed model has an analytical expression respectively in both high and low frequency domain. A critical comparison is made between the simplified model and the original model. The simplified KWW model is able to describe the dielectric relaxation data of high-k materials to a high degree of accuracy.
AB - The dielectric relaxation in the high-k materials, which would cause the metal-oxide-semiconductor field-effect transistor deterioration, is able to be fitted by several models. A novel model is proposed to simplify the original Kohlrausch-Williams-Watts (KWW) model. The proposed model has an analytical expression respectively in both high and low frequency domain. A critical comparison is made between the simplified model and the original model. The simplified KWW model is able to describe the dielectric relaxation data of high-k materials to a high degree of accuracy.
UR - http://www.scopus.com/inward/record.url?scp=84874880891&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2012.6467945
DO - 10.1109/ICSICT.2012.6467945
M3 - Conference Proceeding
AN - SCOPUS:84874880891
SN - 9781467324724
T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Y2 - 29 October 2012 through 1 November 2012
ER -