@inproceedings{05c02dd02f1b496e97e65168ba0f32bc,
title = "Development of GaN Monolithic Integrated Circuits for Power Conversion",
abstract = "This paper describes the development of a viable platform for the design of full GaN (Gallium Nitride) monolithic integrated circuits for power conversion applications. The Normally-on and normally-off AlGaN/GaN power HEMT devices are used for the integrated circuit design using the ADS (Advanced Design System) tool. A monolithic switched-mode DC-DC buck converter with integrated functional blocks and over-current protection is used to showcase the suitability of the development. The designed GaN power integrated circuit was fully fabricated and tested to verify its functionality in power conversion.",
keywords = "GaN Integrated Circuit, Power Integrated Circuit",
author = "Liang, {Yung C.} and Ruize Sun and Yeo, {Yee Chia} and Cezhou Zhao",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019 ; Conference date: 14-04-2019 Through 17-04-2019",
year = "2019",
month = apr,
doi = "10.1109/CICC.2019.8780294",
language = "English",
series = "Proceedings of the Custom Integrated Circuits Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE Custom Integrated Circuits Conference, CICC 2019",
}