Design of a novel 8-port memory cell

Jian Chang*, K. L. Man, Enggee Lim

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

Abstract

A general procedure to calculate the stability of the multiport memory cell is proposed. Noise margins of the 4-port and 8-port SRAM cell are studied. A novel 8-port memory cell is proposed to reduce the read access time.

Original languageEnglish
Title of host publication2010 International SoC Design Conference, ISOCC 2010
Pages445-448
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 International SoC Design Conference, ISOCC 2010 - Incheon, Korea, Republic of
Duration: 22 Nov 201023 Nov 2010

Publication series

Name2010 International SoC Design Conference, ISOCC 2010

Conference

Conference2010 International SoC Design Conference, ISOCC 2010
Country/TerritoryKorea, Republic of
CityIncheon
Period22/11/1023/11/10

Keywords

  • Multiport SRAM
  • Noise margin

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