TY - GEN
T1 - Design and Evaluation of GaN-based Over-Temperature Protection Circuit
AU - Kang, Lei
AU - Wen, Huiqing
AU - Bu, Qinglei
AU - Liu, Wen
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - Over-temperature protection is becoming essential for the power converter design with the increase of switching frequency and power density demand. Especially for Gallium Nitride (GaN) based power integrated circuits (ICs), the issue of over-heating may result in the system destructive breakdown. Originated from the GaN based power integration technique, this paper presents a GaN-based on-chip temperature sensing and protection (OTSP) circuit that can deliver a desirable signal at the critical temperature. Specifically, the OTSP circuit is constructed using Advanced Designed System (ADS). The single D-mode and E-mode components are simulated with the different VGS to show its characteristic. The drain current of lateral fieldeffect rectifier is examined to imply the temperature effect on this component. Finally, the voltage transfer characteristic is stated.
AB - Over-temperature protection is becoming essential for the power converter design with the increase of switching frequency and power density demand. Especially for Gallium Nitride (GaN) based power integrated circuits (ICs), the issue of over-heating may result in the system destructive breakdown. Originated from the GaN based power integration technique, this paper presents a GaN-based on-chip temperature sensing and protection (OTSP) circuit that can deliver a desirable signal at the critical temperature. Specifically, the OTSP circuit is constructed using Advanced Designed System (ADS). The single D-mode and E-mode components are simulated with the different VGS to show its characteristic. The drain current of lateral fieldeffect rectifier is examined to imply the temperature effect on this component. Finally, the voltage transfer characteristic is stated.
KW - GaN device
KW - Over-temperature protection
KW - power integration
UR - http://www.scopus.com/inward/record.url?scp=85071449341&partnerID=8YFLogxK
U2 - 10.1109/ICICDT.2019.8790903
DO - 10.1109/ICICDT.2019.8790903
M3 - Conference Proceeding
AN - SCOPUS:85071449341
T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Y2 - 17 June 2019 through 19 June 2019
ER -