Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator

Bangbo Sun; Huiqing Wen; Qingling Bu; Wen Liu

doi:10.1109/ICICDT.2019.8790910

Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator

Bangbo Sun, Huiqing Wen, Qingling Bu, Wen Liu

Xi'an Jiaotong-Liverpool University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

As one key building block for mixed-signal IC applications, AlGaN/GaN high electron mobility transistor (HEMT) voltage comparator shows obvious advantages. This paper aims to study on the dc and dynamic characterization of AlGaN/GaN HEMT voltage comparator by simulation under different conditions. In this paper three characteristics of the AlGaN/GaN HEMT comparator are simulated by Advanced Design System (ADS) software: the DC characteristics of discrete E and D mode AlGaN/GaN HEMTs, the voltage transfer characteristics of the HEMTs voltage comparator and the propagation delay time. These results show that the AlGaN/GaN HEMT comparator has the features of a good voltage transfer characteristics and a small propagation delay time.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790910
Publication status	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

GaN devices
comparator circuit
monolithic integration

Access to Document

10.1109/ICICDT.2019.8790910

Cite this

Sun, B., Wen, H., Bu, Q., & Liu, W. (2019). Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790910 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790910

Sun, Bangbo ; Wen, Huiqing ; Bu, Qingling et al. / Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

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title = "Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator",

abstract = "As one key building block for mixed-signal IC applications, AlGaN/GaN high electron mobility transistor (HEMT) voltage comparator shows obvious advantages. This paper aims to study on the dc and dynamic characterization of AlGaN/GaN HEMT voltage comparator by simulation under different conditions. In this paper three characteristics of the AlGaN/GaN HEMT comparator are simulated by Advanced Design System (ADS) software: the DC characteristics of discrete E and D mode AlGaN/GaN HEMTs, the voltage transfer characteristics of the HEMTs voltage comparator and the propagation delay time. These results show that the AlGaN/GaN HEMT comparator has the features of a good voltage transfer characteristics and a small propagation delay time.",

keywords = "GaN devices, comparator circuit, monolithic integration",

author = "Bangbo Sun and Huiqing Wen and Qingling Bu and Wen Liu",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790910",

language = "English",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

}

Sun, B, Wen, H, Bu, Q & Liu, W 2019, Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790910, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790910

Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator. / Sun, Bangbo; Wen, Huiqing; Bu, Qingling et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790910 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator

AU - Sun, Bangbo

AU - Wen, Huiqing

AU - Bu, Qingling

AU - Liu, Wen

PY - 2019/6

Y1 - 2019/6

N2 - As one key building block for mixed-signal IC applications, AlGaN/GaN high electron mobility transistor (HEMT) voltage comparator shows obvious advantages. This paper aims to study on the dc and dynamic characterization of AlGaN/GaN HEMT voltage comparator by simulation under different conditions. In this paper three characteristics of the AlGaN/GaN HEMT comparator are simulated by Advanced Design System (ADS) software: the DC characteristics of discrete E and D mode AlGaN/GaN HEMTs, the voltage transfer characteristics of the HEMTs voltage comparator and the propagation delay time. These results show that the AlGaN/GaN HEMT comparator has the features of a good voltage transfer characteristics and a small propagation delay time.

AB - As one key building block for mixed-signal IC applications, AlGaN/GaN high electron mobility transistor (HEMT) voltage comparator shows obvious advantages. This paper aims to study on the dc and dynamic characterization of AlGaN/GaN HEMT voltage comparator by simulation under different conditions. In this paper three characteristics of the AlGaN/GaN HEMT comparator are simulated by Advanced Design System (ADS) software: the DC characteristics of discrete E and D mode AlGaN/GaN HEMTs, the voltage transfer characteristics of the HEMTs voltage comparator and the propagation delay time. These results show that the AlGaN/GaN HEMT comparator has the features of a good voltage transfer characteristics and a small propagation delay time.

KW - GaN devices

KW - comparator circuit

KW - monolithic integration

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U2 - 10.1109/ICICDT.2019.8790910

DO - 10.1109/ICICDT.2019.8790910

M3 - Conference Proceeding

AN - SCOPUS:85071442723

T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019

Y2 - 17 June 2019 through 19 June 2019

ER -

Sun B, Wen H, Bu Q, Liu W. Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790910. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790910

Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator

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