Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S

K. T.R. Reddy; M. V. Reddy; M. Leach; J. K. Tan; D. Y. Jang; R. W. Miles

doi:10.1063/1.4710200

Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H₂S

K. T.R. Reddy^*, M. V. Reddy, M. Leach, J. K. Tan, D. Y. Jang, R. W. Miles

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

4 Citations (Scopus)

Abstract

Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H₂S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.

Original language	English
Title of host publication	Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
Pages	709-710
Number of pages	2
Edition	1
DOIs	https://doi.org/10.1063/1.4710200
Publication status	Published - 2012
Externally published	Yes
Event	56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, India Duration: 19 Dec 2011 → 23 Dec 2011

Publication series

Name	AIP Conference Proceedings
Number	1
Volume	1447
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	56th DAE Solid State Physics Symposium 2011
Country/Territory	India
City	Kattankulathur, Tamilnadu
Period	19/12/11 → 23/12/11

Keywords

SnS films
Structural properties
X-ray diffraction

Access to Document

10.1063/1.4710200

Cite this

@inproceedings{9f46ba6ca4d74acfb06062fc9a896858,

title = "Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S",

abstract = "Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.",

keywords = "SnS films, Structural properties, X-ray diffraction",

author = "Reddy, {K. T.R.} and Reddy, {M. V.} and M. Leach and Tan, {J. K.} and Jang, {D. Y.} and Miles, {R. W.}",

year = "2012",

doi = "10.1063/1.4710200",

language = "English",

isbn = "9780735410442",

series = "AIP Conference Proceedings",

number = "1",

pages = "709--710",

booktitle = "Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011",

edition = "1",

note = "56th DAE Solid State Physics Symposium 2011 ; Conference date: 19-12-2011 Through 23-12-2011",

}

Reddy, KTR, Reddy, MV, Leach, M, Tan, JK, Jang, DY & Miles, RW 2012, Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H₂S. in Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011. 1 edn, AIP Conference Proceedings, no. 1, vol. 1447, pp. 709-710, 56th DAE Solid State Physics Symposium 2011, Kattankulathur, Tamilnadu, India, 19/12/11. https://doi.org/10.1063/1.4710200

Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H₂S. / Reddy, K. T.R.; Reddy, M. V.; Leach, M. et al.
Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011. 1. ed. 2012. p. 709-710 (AIP Conference Proceedings; Vol. 1447, No. 1).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AB - Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.

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